MMBTA06
TYPICAL CHARACTERISTICS
300
Current-Gain Bandwidth
Product, f
T
(MHz)
NPN SILICON TRANSISTOR
Current -Gain Bandwidth Product
Capacitance
80
60
T
J
=25℃
Capacitance, C (pF)
200
V
CE
=2.0V
T
J
=25℃
100
70
50
30
2.0 3.0 5.0 7.010 20 30 50 70 100 200
Collector Current, I
C
(mA)
40
C
ibo
20
C
obo
10
8.0
6.0
4.0
0.1 0.2 0.5 10 20 5.0 10 20 50 100
Reverse Voltage, V
R
(V)
1.0K
700
500
Switching Time
Active-Region Safe Operating Area
1.0K
700
500
1.0ms
T
C
=25℃
1.0s
100µs
Collector Current, I
C
(mA)
Time, t (ns)
300
200
100
70
50
t
s
300
200
t
f
V
CC
=40V
30 I
C
/I
B
=10
t
r
20 I
B1
=I
B2
T =25℃ t
d
@V
BE(off)
=0.5V
10
J
5.0 7.0 10 20 30 50 70100 300 500
Collector Current I
C
(mA)
,
100 T
A
=25℃
70
50
MMBTA05
30
20
MMBTA06
Current Limit
Thermal Limit
Second Breakdown Limit
10
1.0 2.0 3.0 5.07.010 20 30 50 70100
Collector-Emitter Voltage, V
CE
(V)
DC Current Gain
400
T
J
=125℃
V
CE
=1.0V
1.0
0.8
“ON”
Voltages
T
J
=125℃
V
BE(SAT)
@I
C
/I
B
=10
DC Current Gain, h
FE
25℃
Voltage, V
200
0.6
V
BE(ON)
@V
CE
=1.0V
0.4
0.2
V
CE(SAT)
@I
C
/I
B
=10
100
80
60
-55℃
40
0.5 1.0 2.0 3.0 5.010 20 30 50100200300500
Collector Current, I
C
(mA)
0
0.5 1.0 2.0 5.0 10 20 50 100 200 500
Collector Current, I
C
(mA)
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