IL410 参数 Datasheet PDF下载

IL410/ IL4108

Vishay Semiconductors

Parameter

Comparative tracking index per

DIN IEC 112/VDE 0303 part 1,

group IIIa per DIN VDE 6110

Isolation resistance

V

IO

= 500 V, T

amb

= 25 °C

V

IO

= 500 V, T

amb

= 100 °C

Storage temperature range

Ambient temperature range

Soldering temperature

max.

≤

10 sec. dip soldering

≥

0.5 mm from case bottom

R

IO

R

IO

T

stg

T

amb

T

sld

Test condition

Symbol

Value

≥

175

Unit

≥

10

12

≥

10

11

- 55 to + 150

- 55 to + 100

260

Ω

Ω

°C

°C

°C

Electrical Characteristics

T

amb

= 25 °C, unless otherwise specified

Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering

evaluation. Typical values are for information only and are not part of the testing requirements.

Input

Parameter

Forward voltage

Reverse current

Input capacitance

Thermal resistance, junction to

ambient

Test condition

I

F

= 10 mA

V

R

= 6.0 V

V

F

= 0 V, f = 1.0 MHz

Symbol

V

F

I

R

C

IN

R

thja

Min

Typ.

1.16

0.1

25

750

Max

1.35

10

Unit

V

µA

pF

°C/W

Output

Parameter

Off-state voltage

Test condition

I

D(RMS)

= 70

µA

Part

IL410

IL4108

Repetitive peak off-state voltage I

DRM

= 100

µA

Off-state current

V

D

= V

DRM

, T

amb

= 100 °C,

I

F

= 0 mA

V

D

= V

DRM

, I

F

= Rated I

FT

On-state voltage

On-state current

Surge (non-repetitive), on-state

current

Trigger current 1

Trigger current 2

Trigger current temp. gradient

Inhibit voltage temp. gradient

Off-state current in inhibit state

Holding current

Latching current

Zero cross inhibit voltage

Turn-on time

Turn-off time

V

T

= 2.2 V

I

F

= Rated I

FT

V

RM

= V

DM

= V

D(RMS)

PF = 1.0, I

T

= 300 mA

I

F

= I

FT1

, V

DRM

I

T

= 300 mA

PF = 1.0, V

T(RMS)

= 1.7 V

f = 50 Hz

V

D

= 5.0 V

V

OP

= 220 V, f = 50 Hz,

T

J

= 100 °C, t

pF

> 10 ms

IL410

IL4108

Symbol

V

D(RMS)

V

D(RMS)

V

DRM

V

DRM

I

D(RMS)1

I

D(RMS)2

V

TM

I

TM

I

TSM

I

FT1

I

FT2

∆I

FT1

/∆T

j

∆I

FT2

/∆T

j

∆V

DINH

/∆T

j

I

DINH

I

H

I

L

V

IH

t

on

t

off

7.0

7.0

-20

50

65

5.0

15

35

50

25

200

500

1.7

Min

424

565

600

800

10

100

200

3.0

300

3.0

2.0

6.0

14

14

Typ.

460

Max

Unit

V

V

V

V

µA

µA

V

mA

A

mA

mA

µA/°C

µA/°C

mV/°C

µA

µA

mA

V

µs

µs

Document Number 83627

Rev. 1.4, 26-Apr-04

www.vishay.com

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