IRF840A, SiHF840A
Vishay Siliconix
TYPICAL CHARACTERISTICS
25 °C, unless otherwise noted
10
2
10
2
I
D
, Drain-to-Source Current (A)
I
D
, Drain-to-Source Current (A)
10
V
GS
Top
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
4.5
V
10
T
J
= 150
°
C
T
J
= 25
°
C
1
1
0.1
0.1
91065_01
20
µs
Pulse
Width
T
C
=
25 °C
1
10
10
2
0.1
4.0
91065_03
20
µs
Pulse
Width
V
DS
=
50
V
5.0
6.0
7.0
8.0
9.0
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
V
GS,
Gate-to-Source
Voltage
(V)
Fig. 3 - Typical Transfer Characteristics
I
D
, Drain-to-Source Current (A)
10
V
GS
Top
15
V
10
V
8.0 V
7.0
V
6.0
V
5.5
V
5.0
V
Bottom 4.5
V
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
10
2
3.0
2.5
2.0
1.5
1.0
0.5
I
D
=
8.0
A
V
GS
= 10
V
4.5
V
1
0.1
0.1
91065_02
20
µs
Pulse
Width
T
C
=
150 °C
1
10
10
2
0.0
- 60 - 40 - 20
0
20 40 60
80
100 120 140 160
V
DS
, Drain-to-Source
Voltage
(V)
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
91065_04
T
J,
Junction Temperature (°C)
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91065
S-81275-Rev. A, 16-Jun-08
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