IRF840A, SiHF840A
Vishay Siliconix
E
AS
, Single Pulse Avalanche Energy (mJ)
1200
1000
800
600
400
200
0
25
50
75
100
125
150
Starting T
J
, Junction Temperature (°C)
600
V
DSav
, Avalanche
Voltage
(V)
I
D
Top
3.6 A
5.1 A
Bottom
8.0
A
580
560
540
520
0.0
91065_12d
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
91065_12c
I
AV
, Avalanche Current (A)
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
Fig. 12d - Typical Drain-to-Source Voltage vs.
Avalanche Current
Current regulator
Same type as D.U.T.
50 kΩ
12
V
10
V
Q
GS
Q
G
0.2
µF
0.3
µF
Q
GD
D.U.T.
+
-
V
DS
V
G
V
GS
3 mA
Charge
I
G
I
D
Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91065
S-81275-Rev. A, 16-Jun-08
VISHAY [ VISHAY TELEFUNKEN ]
