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TSMS3700 参数 Datasheet PDF下载

TSMS3700图片预览
型号: TSMS3700
PDF下载: 下载PDF文件 查看货源
内容描述: 砷化镓红外发光二极管在SMT封装 [GaAs Infrared Emitting Diode in SMT Package]
分类和应用: 半导体二极管
文件页数/大小: 6 页 / 57 K
品牌: VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
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TSMS3700
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25
_
C
Parameter
Reverse Voltage
Forward Current
Peak Forward Current
Surge Forward Current
Power Dissipation
Junction Temperature
Operating Temperature Range
Storage Temperature Range
Soldering Temperature
Thermal Resistance Junction/Ambient
Test Conditions
t
p
/T = 0.5, t
p
= 100
m
s
t
p
= 100
m
s
Symbol
V
R
I
F
I
FM
I
FSM
P
V
T
j
T
amb
T
stg
T
sd
R
thJA
Value
5
100
200
1.5
170
100
–55...+100
–55...+100
260
450
Unit
V
mA
mA
A
mW
°
C
°
C
°
C
°
C
K/W
t 10sec
on PC board
x
Basic Characteristics
T
amb
= 25
_
C
Parameter
Forward Voltage
g
Temp. Coefficient of V
F
Reverse Current
Junction Capacitance
Radiant Intensity
y
Radiant Power
Temp. Coefficient of
f
e
Angle of Half Intensity
Peak Wavelength
Spectral Bandwidth
Temp. Coefficient of
l
p
Rise Time
Fall Time
Test Conditions
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1 A, t
p
= 100
m
s
I
F
= 100mA
V
R
= 5 V
V
R
= 0 V, f = 1 MHz, E = 0
I
F
= 100 mA, t
p
= 20 ms
I
F
= 1.5 A, t
p
= 100
m
s
I
F
= 100 mA, t
p
= 20 ms
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 100 mA
I
F
= 20 mA
I
F
= 1 A
I
F
= 20 mA
I
F
= 1 A
Symbol
V
F
V
F
TK
VF
I
R
C
j
I
e
I
e
TK
f
e
ϕ
Min
Typ
1.3
1.8
–1.3
30
4.5
35
15
–0.8
±60
950
50
0.2
800
400
800
400
Max
1.7
Unit
V
V
mV/K
m
A
pF
mW/sr
mW/sr
mW
%/K
deg
nm
nm
nm/K
ns
ns
ns
ns
100
1.6
f
e
TK
l
p
t
r
t
r
t
f
t
f
l
p
Dl
www.vishay.com
2 (6)
Document Number 81037
Rev. 3, 01-Aug-00