欢迎访问ic37.com |
会员登录 免费注册
发布采购

VSC8114QB 参数 Datasheet PDF下载

VSC8114QB图片预览
型号: VSC8114QB
PDF下载: 下载PDF文件 查看货源
内容描述: ATM / SONET / SDH 622 Mb / s的收发器复用/解复用,集成时钟发生器和时钟恢复 [ATM/SONET/SDH 622 Mb/s Transceiver Mux/Demux with Integrated Clock Generation and Clock Recovery]
分类和应用: 时钟发生器ATM集成电路SONET集成电路SDH集成电路电信集成电路电信电路异步传输模式
文件页数/大小: 24 页 / 437 K
品牌: VITESSE [ VITESSE SEMICONDUCTOR CORPORATION ]
 浏览型号VSC8114QB的Datasheet PDF文件第8页浏览型号VSC8114QB的Datasheet PDF文件第9页浏览型号VSC8114QB的Datasheet PDF文件第10页浏览型号VSC8114QB的Datasheet PDF文件第11页浏览型号VSC8114QB的Datasheet PDF文件第13页浏览型号VSC8114QB的Datasheet PDF文件第14页浏览型号VSC8114QB的Datasheet PDF文件第15页浏览型号VSC8114QB的Datasheet PDF文件第16页  
VITESSE
SEMICONDUCTOR CORPORATION
ATM/SONET/SDH 622 Mb/s Transceiver Mux/Demux
with Integrated Clock Generation and Clock Recovery
Parameter
V
IL
I
IH
I
IL
Description
Input LOW voltage
(TTL)
Input HIGH current
(TTL)
Input LOW current
(TTL)
Min
0
Data Sheet
VSC8114
Max
0.8
500
-500
Typ
50
Units
V
µA
µA
Conditions
2.0V< V
IN
<
5.5V,
Typical@2.4V
-0.5V< V
IN
<0.8V
Power Dissipation
Table 9: Power Supply Currents
Parameter
I
DD
I
DDP
P
D
Power supply current from V
DD
Power supply current from PECL I/O Supply V
DDP
(output unloaded)
Power dissipation (Worst Case) (I
DD
+ I
DDP
) x 3.45V = 1.51
Description
Max
410
30
1.51
Units
mA
mA
W
Absolute Maximum Ratings
(1)
Power Supply Voltage (V
DD
) Potential to GND .................................................................................-0.5V to +4V
PECL I/O Supply Voltage (V
DDP
) Potential to GND..........................................................................-0.5V to +6V
DC Input Voltage (PECL inputs).......................................................................................... -0.5V to V
DDP
+0.5V
DC Input Voltage (TTL inputs) ......................................................................................................... -0.5V to 5.5V
DC Output Voltage (TTL Outputs)........................................................................................ -0.5V to V
DD
+ 0.5V
Output Current (TTL Outputs) ................................................................................................................. +/-50mA
Output Current (PECL Outputs)................................................................................................................+/-50mA
Case Temperature Under Bias .........................................................................................................-55
o
to +125
o
C
Storage Temperature..................................................................................................................... -65
o
C to +150
o
C
Maximum Input ESD (Human Body Model).............................................................................................. 1500 V
Note: Caution: Stresses listed under “Absolute Maximum Ratings” may be applied to devices one at a time without causing
permanent damage. Functionality at or exceeding the values listed is not implied. Exposure to these values for extended
periods may affect device reliability.
Recommended Operating Conditions
Power Supply Voltage (V
DD
) ................................................................................................................. +3.3V
±
5
%
PECL I/O Supply Voltage (V
DDP
).......................................................................................... +3.3V or +5.0V
±
5
%
Commercial Operating Temperature Range ..................................................................... 0
o
ambient to 70
o
C case
Extended Operating Temperature Range.........................................................................0
o
ambient to 115
o
C case
Industrial Operating Temperature Range ...................................................................... -40
o
ambient to 85
o
C case
Page 12
©
VITESSE
SEMICONDUCTOR CORPORATION
741 Calle Plano, Camarillo, CA 93012 • 805/388-3700 • FAX: 805/987-5896
G52185-0, Rev 4.0
11/1/99