VIS
DC Characteristics ; 5-Volt Version (Cont.)
(T
a
= 0 to + 70
°C
,
V
CC
= + 5V
±
10
%,V
SS
= 0V)
VG26(V)(S)18165C
-5
Parameter
Input leakage current
Output leakage current
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
I N
≤
V
C C
+ 0.5V
0V
≤
V
OUT
≤
V
CC
+ 0.5V
Dout = Disable
Output high Voltage
Output low voltage
I
OH
= - 5mA
I
OL
= + 4.2mA
2.4
-
-
0.4
2.4
-
Min
-5
-5
Max
5
5
Min
-5
-5
-6
VG26(V)(S)18165C
1,048,576 x 16 - Bit
CMOS Dynamic RAM
Max
5
5
Unit
µA
µA
V
V
Notes
-
0.4
Notes:
1. I
CC
is specified as an average current. It depends on output loading condition and cycle rate when the
device is selected. I
CC
max is specified at the output open condition.
2. Address can be changed once or less while RAS = V
IL
.
3. For I
CC4
, address can be changed once or less within one EDO page mode cycle time.
Document:1G5-0147
Rev.1
Page 7
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
