VIS
Absolute Maximum Ratings
Preliminary
VG3617161DT
16Mb CMOS Synchronous Dynamic RAM
Parameter
Voltage on any pin relative to Vss
Supply voltage relative to Vss
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Symbol
V
IN
,V
OUT
V
DD
,V
DDQ
I
OUT
P
D
T
OPT
T
STG
Value
-1.0 to +4.6
-1.0 to +4.6
50
1.0
0 to + 70
-55 to + 125
Unit
V
V
mA
W
¢
J
¢
J
Recommended DC Operating Conditions
Parameter
Supply Voltage
Input High Voltage, all inputs
Input Low Voltage, all inputs
Symbol
V
DD
V
IH
V
IL
Min
3.0
2.0
-0.3
Typ
3.3
Ð
¡
Ð
¡
Max
3.6
V
DD
+0.3
0.8
Unit
V
V
V
Note
1
2
Note 1.Overshoot limit : V
IH(MAX.)
=V
DDQ
+2.0V with a pulse width < 3ns
2.Undershoot limit : V
IL
=V
SSQ
-2.0V with a pulse < 3ns and -1.5V with a pulse < 5ns
Parameter
I
IL
I
OL
( 0V
≤
V
≤
V
Description
Input Leakage Current
All other pins not under test = OV)
Min.
-5
Max.
5
Unit
µ
A
µ
A
Note
IN
DD
Output Leakage Current
Output disable, ( 0V
≤
V
≤
V
)
OUT
DDQ
LVTTL Output ”H” Level Voltage
(l
OUT
= -2mA)
LVTTL Output ”L” Level Voltage
(l
OUT
= 2mA)
-5
5
V
OH
V
OL
2.4
-
-
0.4
V
V
Document:1G5-0160
Rev.1
Page 4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
