VIS
Absolute Maximum D.C. Ratings
Parameter
Voltage on any pin relative to Vss
Supply voltage relative to Vss
Short circuit output current
Power dissipation
Operating temperature
Storage temperature
Preliminary
VG36648041CT
CMOS Synchronous Dynamic RAM
Symbol
V
IN
, V
OUT
V
DD
, V
DDQ
I
OUT
P
D
T
OPT
T
STG
Value
-0.5 to + 4.6
-0.5 to + 4.6
50
1.0
0 to + 70
-55 to + 125
Unit
V
V
mA
W
°C
°C
Caution
Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
peumanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Maximum A.C. Operating Requirements for LVTTL Compatible
Parameter
Input High Voltage
Input Low Voltage
Symbol
V
IH
V
IL
Min
2.0
V
SSQ
-2.0
Max
V
DDQ
+ 2.0
0.8
Unit
V
V
Notes
2
2
Recommended DC Operating Conditions for LVTTL Compatible
Parameter
Supply Voltage
Input High Voltage, all inputs
Input Low Voltage, all inputs
Symbol
V
DD,
V
DDQ
V
IH
V
IL
Min
3.0
2.0
-0.3
Typ
3.3
-
-
Max
3.6
V
DD
+ 0.3
0.8
Unit
V
V
V
Capacitance
(Ta = 25°C, f = 1MHZ)
Parameter
Input capacitance (All input pins except CLK pin)
CLK pin
Data input/output capacitance
Symbol
C
in
C
CLK
C
I/O
Min
2.5
2.5
4.0
Typ
3.75
3.25
5.25
Max
5.0
4.0
6.5
Unit
pF
pF
pF
Notes
1
1
1
Notes : 1. Capacitance measured with effective capacitance measuring method.
2. The overshoot and undershoot voltage duration is
≤
3ns with no input clamp diodes.
Document : 1G5-0153
Rev.1
Page 4
VML [ VANGUARD INTERNATIONAL SEMICONDUCTOR ]
