WE512K8, WE256K8,
WE128K8-XCX
White Electronic Designs
READ
Figure 5 shows Read cycle waveforms. A read cycle begins
places the selected data byte on I/O0 through I/O7 after the
access time. The output of the memory is placed in a high
impedance state shortly after either the OE# line or CS# line
is returned to a high level.
with selection address, chip select and output enable. Chip
select is accomplished by placing the CS# line low. Output
enable is done by placing the OE# line low. The memory
FIGURE 5 – READ WAVEFORMS
ADDRESS
CS#
OE#
OUTPUT
NOTE:
OE# may be delayed up to tACS-tOE after the falling edge of CS# without impact on tOE
or by tACC-tOE after an address change without impact on tACC.
AC READ CHARACTERISTICS (See Figure 5)
FOR WE512K8-XCX
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C
-150
-200
-250
-300
Parameter
Symbol
Unit
Min
Max
Min
Max
Min
Max
Min
Max
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change, OE# or CS#
Output Enable to Output Valid
Chip Select or Output Enable to High Z Output
trc
tacc
tacs
toh
toe
tdf
150
200
250
300
ns
ns
ns
ns
ns
ns
150
150
200
200
250
250
300
300
0
0
0
0
85
70
85
70
100
70
125
70
FOR WE256K8-XCX and WE128K8-XCX
-150
-200
Parameter
Symbol
Unit
Min
Max
Min
Max
Read Cycle Time
Address Access Time
Chip Select Access Time
Output Hold from Address Change, OE# or CS#
Output Enable to Output Valid
Chip Select or Output Enable to High Z Output
trc
tacc
tacs
toh
toe
tdf
150
200
ns
ns
ns
ns
ns
ns
150
150
200
200
0
0
85
70
85
70
White Electronic Designs Corp. reserves the right to change products or specifications without notice.
May 2000
Rev. 1
5
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com