欢迎访问ic37.com |
会员登录 免费注册
发布采购

WE512K8 参数 Datasheet PDF下载

WE512K8图片预览
型号: WE512K8
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx8 CMOS EEPROM , WE512K8 - XCX , SMD 5962-93091 [512Kx8 CMOS EEPROM, WE512K8-XCX, SMD 5962-93091]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器
文件页数/大小: 13 页 / 617 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
 浏览型号WE512K8的Datasheet PDF文件第5页浏览型号WE512K8的Datasheet PDF文件第6页浏览型号WE512K8的Datasheet PDF文件第7页浏览型号WE512K8的Datasheet PDF文件第8页浏览型号WE512K8的Datasheet PDF文件第10页浏览型号WE512K8的Datasheet PDF文件第11页浏览型号WE512K8的Datasheet PDF文件第12页浏览型号WE512K8的Datasheet PDF文件第13页  
WE512K8, WE256K8,  
WE128K8-XCX  
White Electronic Designs  
The page address must be the same for each byte load  
and must be valid during each high to low transition of  
WE# (or CS#). The block address also must be the same  
for each byte load and must remain valid throughout the  
WE# (or CS#) low pulse. The page and block address  
lines are summarized below:  
PAGE WRITE OPERATION  
These devices have a page write operation that allows one  
to 64 bytes of data (one to 128 bytes for the WE512K8) to  
be written into the device and then simultaneously written  
during the internal programming period. Successive bytes  
may be loaded in the same manner after the first data  
byte has been loaded. An internal timer begins a time  
out operation at each write cycle. If another write cycle  
is completed within 150µs or less, a new time out period  
begins. Each write cycle restarts the delay period. The write  
cycles can be continued as long as the interval is less than  
the time out period.  
PAGE MODE CHARACTERISTICS  
VCC = 5.0V, VSS = 0V, -55°C ≤ TA ≤ +125°C  
Parameter  
Write Cycle Time, TYP = 6mS  
Data Set-up Time  
Symbol  
tWC  
tDS  
Min  
Max  
10  
Unit  
ms  
ns  
100  
10  
Data Hold Time  
tDH  
ns  
The usual procedure is to increment the least significant  
address lines from A0 through A5 (A0 through A6 for the  
WE512K8) at each write cycle. In this manner a page of  
up to 64 bytes (128 bytes for the WE512K8) can be loaded  
into the EEPROM in a burst mode before beginning the  
relatively long interval programming cycle.  
Write Pulse Width  
Byte Load Cycle Time  
Write Pulse Width High  
tWP  
tBLC  
tWPH  
150  
ns  
µs  
ns  
150  
50  
Device  
Block Address  
A17-A18  
Page Address  
A7-A16  
After the 150µs time out is completed, the EEPROM  
begins an internal write cycle. During this cycle the entire  
page of bytes will be written at the same time. The internal  
programming cycle is the same regardless of the number  
of bytes accessed.  
WE512K8-XCX  
WE256K8-XCX  
WE128K8-XCX  
A15-A17  
A15-A16  
A6-A14  
A6-A14  
FIGURE 9 – PAGE WRITE WAVEFORMS  
OE#  
CS#  
WE#  
ADDRESS (1)  
DATA  
NOTE:  
1. Decoded Address Lines must be valid for the duration of the write.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
May 2000  
Rev. 1  
9
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com