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WED3DL3216V10BI 参数 Datasheet PDF下载

WED3DL3216V10BI图片预览
型号: WED3DL3216V10BI
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mx32 SDRAM [16Mx32 SDRAM]
分类和应用: 存储动态存储器
文件页数/大小: 27 页 / 804 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED3DL3216V  
White Electronic Designs  
PAGE WRITE CYCLE AT DIFFERENT BANK @ BURST LENGTH = 4  
3
5
6
18  
19  
2
4
7
8
9
11  
12  
13  
15  
16  
17  
0
1
10  
14  
CLOCK  
CKE  
HIGH  
CE#  
RAS#  
Note 2  
CAS#  
ADDR  
RBb  
CAa  
CBb  
CAc  
CBd  
RAa  
BA  
A10/AP  
DQ  
RAa  
RBb  
tCDL  
DAa1 DAa2 DAa3  
tRDL  
DBd1  
DAa0  
DBb0  
DBb1  
DBb2  
DBb3  
DAc0 DAc1 DBd0  
WE#  
Note 1  
DQM  
Precharge  
(All Banks)  
Row Active  
(B-Bank)  
Write  
(B-Bank)  
Write  
(A-Bank)  
Write  
(B-Bank)  
Precharge  
(Both Banks)  
Row Active  
(A-Bank)  
Write  
(A-Bank)  
DON’T CARE  
NOTES:  
1.  
2.  
To interrupt burst write by Row precharge, DQM should be asserted to mask invalid input data.  
To interrupt burst write by Row precharge, both the write and the precharge banks must be the same.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
January, 2004  
Rev. 0  
17  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com