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WED3DL3216V10BI 参数 Datasheet PDF下载

WED3DL3216V10BI图片预览
型号: WED3DL3216V10BI
PDF下载: 下载PDF文件 查看货源
内容描述: 16Mx32 SDRAM [16Mx32 SDRAM]
分类和应用: 存储动态存储器
文件页数/大小: 27 页 / 804 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED3DL3216V  
White Electronic Designs  
PAGE READ & WRITE CYCLE AT SAME BANK @ BURST LENGTH = 4  
3
5
6
18  
19  
2
4
7
8
9
11  
12  
13  
15  
16  
17  
0
1
10  
14  
CLOCK  
CKE  
HIGH  
CE#  
tRCD  
RAS#  
Note 2  
CAS#  
ADDR  
Rb  
Cb0  
Ra  
Cb0  
Ca0  
BA  
A10/AP  
CL = 2  
Ra  
tRDL  
Qa0  
Qa1  
Qb0  
Qa1  
Qb1  
Qb0  
Qb2  
Dd1  
Dc0  
Dc0  
Dc1  
Dd0  
Dd0  
DQ  
tCDL  
CL = 3  
Qa0  
Qb1  
Dc1  
Dd1  
WE#  
Precharge  
(All Banks)  
Note 1  
Note 3  
DQM  
Precharge  
(A-Bank)  
Write  
(A-Bank)  
Read  
(A-Bank)  
Read  
(A-Bank)  
Row Active  
(A-Bank)  
Write  
(A-Bank)  
DON’T CARE  
NOTES:  
1.  
2.  
3.  
To write data before burst read ends, DQM should be asserted three cycles prior to write command to avoid bus contention.  
Row precharge will interrupt writing. Last data input, tRDL before Row precharge, will be written.  
DQM should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be masked  
internally.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
January, 2004  
Rev. 0  
15  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com