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WED9LAPC2C16V8BI 参数 Datasheet PDF下载

WED9LAPC2C16V8BI图片预览
型号: WED9LAPC2C16V8BI
PDF下载: 下载PDF文件 查看货源
内容描述: 512K ×32 SSRAM / 1M ×64 SDRAM [512K x 32 SSRAM / 1M x 64 SDRAM]
分类和应用: 存储内存集成电路静态存储器动态存储器
文件页数/大小: 24 页 / 935 K
品牌: WEDC [ WHITE ELECTRONIC DESIGNS CORPORATION ]
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WED9LAPC2C16V8BC  
White Electronic Designs  
FIG. 7 SDRAM PAGE READ & WRITE CYCLE AT SAME BANK @ BURST LENGTH = 4  
0
1
2
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
GCK  
t
RCD  
VCRAS#  
VCCAS#  
VCADDR  
Note 2  
Ca0  
Cb0  
Cd0  
Cc0  
Ra  
VCBS  
VCADDR9/AP  
Ra  
t
RDL  
CL = 2  
Qa0  
Qa1  
Qb2  
Qb1  
Qb2  
Dc0  
Dc1  
Dd0  
Dd1  
VCDATA  
t
CDL  
CL = 3  
Qa0  
Qa1  
Qb0  
Qb1  
Dc0  
Dc1  
Dd0  
Dd1  
VCWE#  
Note 1  
Note 3  
VCDQM#  
Read  
(A-Bank)  
Row Active  
(A-Bank)  
Read  
(A-Bank)  
Write  
Precharge  
(A-Bank)  
Write  
(A-Bank)  
(A-Bank)  
DON’T CARE  
Notes:  
1.  
2.  
3.  
To write data before burst read ends. VCDQM# should be asserted three cycle prior to write command to avoid bus contention.  
Row precharge will interrupt writing. Last data input, tRDL before Row precharge will be written.  
VCDQM# should mask invalid input data on precharge command cycle when asserting precharge before end of burst. Input data after Row precharge cycle will be  
masked internally.  
White Electronic Designs Corp. reserves the right to change products or specifications without notice.  
July, 2000  
Rev. 0  
14  
White Electronic Designs Corporation • (602) 437-1520 • www.wedc.com