欢迎访问ic37.com |
会员登录 免费注册
发布采购

WCSS0418V1P-166AC 参数 Datasheet PDF下载

WCSS0418V1P-166AC图片预览
型号: WCSS0418V1P-166AC
PDF下载: 下载PDF文件 查看货源
内容描述: 256K ×18的同步流水线高速缓存RAM [256K x 18 Synchronous-Pipelined Cache RAM]
分类和应用:
文件页数/大小: 17 页 / 662 K
品牌: WEIDA [ WEIDA SEMICONDUCTOR, INC. ]
 浏览型号WCSS0418V1P-166AC的Datasheet PDF文件第1页浏览型号WCSS0418V1P-166AC的Datasheet PDF文件第2页浏览型号WCSS0418V1P-166AC的Datasheet PDF文件第3页浏览型号WCSS0418V1P-166AC的Datasheet PDF文件第4页浏览型号WCSS0418V1P-166AC的Datasheet PDF文件第6页浏览型号WCSS0418V1P-166AC的Datasheet PDF文件第7页浏览型号WCSS0418V1P-166AC的Datasheet PDF文件第8页浏览型号WCSS0418V1P-166AC的Datasheet PDF文件第9页  
WCSS0418V1P
Because the WCSS0418V1P is a common I/O device, the
Output Enable (OE) must be deasserted HIGH before present-
ing data to the DQ
[15:0]
and DP
[1:0]
inputs. Doing so will
three-state the output drivers. As a safety precaution, DQ
[15:0]
and DP
[1:0]
are automatically three-stated whenever a write
cycle is detected, regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following condi-
tions are satisfied: (1) ADSC is asserted LOW, (2) ADSP is
deasserted HIGH, (3) CE
1
, CE
2
, CE
3
are all asserted active,
and (4) the appropriate combination of the write inputs (GW,
BWE, and BW
[1:0]
) are asserted active to conduct a write to
the desired byte(s). ADSC-triggered write accesses require a
single clock cycle to complete. The address presented to
A
[17:0]
is loaded into the address register and the address ad-
vancement logic while being delivered to the RAM core. The
ADV input is ignored during this cycle. If a global write is con-
ducted, the data presented to the DQ
[15:0]
and DP
[1:0]
is written
into the corresponding address location in the RAM core. If a
byte write is conducted, only the selected bytes are written.
Bytes not selected during a byte write operation will remain
unaltered. A synchronous self-timed write mechanism has
been provided to simplify the write operations.
Because the WCSS0418V1P is a common I/O device, the
Output Enable (OE) must be deasserted HIGH before present-
ing data to the DQ
[15:0]
and DP
[1:0]
inputs. Doing so will
three-state the output drivers. As a safety precaution, DQ
[15:0]
and DP
[1:0]
are automatically three-stated whenever a write
cycle is detected, regardless of the state of OE.
a linear burst sequence. The burst sequence is user selectable
through the MODE input.
Asserting ADV LOW at clock rise will automatically increment
the burst counter to the next address in the burst sequence.
Both read and write burst operations are supported.
Interleaved Burst Sequence
First
Address
A
[1:0]
00
01
10
11
Second
Address
A
[1:0]
01
00
11
10
Third
Address
A
[1:0]
10
11
00
01
Fourth
Address
A
[1:0]
11
10
01
00
Linear Burst Sequence
First
Address
A
[1:0]
00
01
10
11
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ plac-
es the SRAM in a power conservation “sleep” mode. Two clock
cycles are required to enter into or exit from this “sleep” mode.
While in this mode, data integrity is guaranteed. Accesses
pending when entering the “sleep” mode are not considered
valid nor is the completion of the operation guaranteed. The
device must be deselected prior to entering the “sleep” mode.
CE
1
, CE
2
, CE
3
, ADSP, and ADSC must remain inactive for the
duration of t
ZZREC
after the ZZ input returns LOW.
Second
Address
A
[1:0]
01
10
11
00
Third
Address
A
[1:0]
10
11
00
01
Fourth
Address
A
[1:0]
11
00
01
10
Burst Sequences
The WCSS0418V1P provides a two-bit wraparound counter,
fed by A
[1:0]
, that implements either an interleaved or linear
burst sequence. The interleaved burst sequence is designed
specifically to support Intel Pentium applications. The linear
burst sequence is designed to support processors that follow
ZZ Mode Electrical Characteristics
Parameter
I
DDZZ
t
ZZS
t
ZZREC
Description
Snooze mode
standby current
Device operation to
ZZ
ZZ recovery time
Test Conditions
ZZ > V
DD
0.2V
ZZ > V
DD
0.2V
ZZ < 0.2V
2t
CYC
Min.
Max.
3
2t
CYC
Unit
mA
ns
ns
Document #: 38-05247
Page 5 of 17