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8550XLT1 参数 Datasheet PDF下载

8550XLT1图片预览
型号: 8550XLT1
PDF下载: 下载PDF文件 查看货源
内容描述: 通用晶体管 [General Purpose Transistors]
分类和应用: 晶体晶体管
文件页数/大小: 3 页 / 418 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
 浏览型号8550XLT1的Datasheet PDF文件第1页浏览型号8550XLT1的Datasheet PDF文件第2页  
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
SOT-23
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
.122(3.10)
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
.106(2.70)
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
General Purpose Transistors
Features
WILLAS
FM120-M
8550xLT1
THRU
FM1200-M
Pb Free Produc
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.006(0.15)MIN.
0.071(1.8)
0.056(1.4)
Mechanical data
.063(1.60)
.047(1.20)
0.031(0.8) Typ.
.083(2.10)
.110(2.80)
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
.080(2.04)
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
.008(0.20)
.003(0.08)
.070(1.78)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
 
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.004(0.10)MAX.
V
RRM
V
RMS
V
DC
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
I
O
.020(0.50)
 
Peak Forward Surge Current 8.3 ms single half sine-wave
.012(0.30)
I
FSM
superimposed on rated load (JEDEC method)
.055(1.40)
.035(0.89)
 
 
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
 
C
Dimensions
J
in inches and (millimeters)
T
J
R
ΘJA
 
-55 to +125
0.037
0.95
0.50
 
-55 to +150
 
-
65
to +175
 
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
0.037
0.95
TSTG
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.70
0.5
10
0.85
0.9
0.92
 
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
 
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.9
0.079
2.0
0.035
 
 
0.031
0.8
inches
mm
2012-
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR