SOT-363 Plastic-Encapsulate
RECTIFIERS -20V- 200V
Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
meet environmental standards of
•
Lead-free parts
Forward Characteristics
300
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
(mA)
100
Mechanical data
WILLAS
FM120-M
BAV70DW
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Typical Characteristics
10000
0.071(1.8)
0.056(1.4)
Reverse Characteristics
REVERSE CURRENT I
R
T=
a
1
00
℃
FORWARD CURRENT
T=
a
2
5
℃
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
10
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
I
F
(nA)
1000
T
a
=100
℃
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
100
Dimensions in inches and (millimeters)
T
a
=25
℃
10
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
1
25℃ ambient temperature unless otherwise specified.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Single phase half wave, 60Hz, resistive of inductive load.
FORWARD VOLTAGE V
F
(V)
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum
1.1
Recurrent
1
0
20
40
60
80
100
REVERSE VOLTAGE
V
R
(V)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNI
Capacitance Characteristics
Peak Reverse Voltage
V
RRM
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
JUNCTION CAPACITANCE
C
J
(pF)
T
a
=25
℃
V
RMS
f=1MHz
14
12
20
20
13
30
21
30
(mW)
250
14
40
28
40
15
50
35
50
16
18
Power Derating Curve
10
60
80
100
42
60
1.0
30
40
120
56
80
70
100
115
150
105
150
120
200
140
200
Volt
Volt
1.0
V
DC
I
O
200
Volt
Amp
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
0.9
I
FSM
R
ΘJA
C
J
T
J
TSTG
P
D
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
0.8
Operating Temperature Range
Storage Temperature Range
POWER DISSIPATION
150
Amp
-55 to +125
100
-55 to +150
℃/W
PF
-
65
to +175
℃
℃
0.7
50
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum
0.6
Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
0
4
8
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNI
V
F
@T A=125℃
V
R
12
16
I
R
20
0.50
0
0
25
0.70
50
0.85
0.5
10
75
100
125
0.9
150
0.92
Volt
mAm
REVERSE VOLTAGE
(V)
AMBIENT TEMPERATURE
T
a
(
℃
)
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
