WILLAS
SOT-323 Plastic-Encapsulate Diodes
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
Forward Characteristics
Ultra high-speed switching.
•
100
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
30
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
T=
a
1
00
℃
FM120-M
THRU
DAN202U
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
Typical
Characteristics
1000
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
Reverse
Characteristics
0.071(1.8)
0.056(1.4)
300
(mA)
REVERSE CURRENT I
R
Mechanical data
FORWARD CURRENT
I
F
10
(nA)
T
a
=100
℃
100
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
3
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
1
T=
a
2
5
℃
30
0.031(0.8) Typ.
0.031(0.8) Typ.
10
T
a
=25
℃
Method 2026
•
Polarity : Indicated by cathode band
0.3
•
Mounting Position : Any
•
0.1
Weight : Approximated 0.011 gram
0.0
0.2
0.4
0.6
F
Dimensions in inches and (millimeters)
3
0.8
1.0
1.2
1
0
20
40
60
80
FORWARD VOLTAGE V (V)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
REVERSE VOLTAGE
V
R
(V)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
Marking Code
1.6
Maximum RMS Voltage
CAPACITANCE BETWEEN TERMINALS
C
T
(pF)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
RATINGS
Power Derating Curve
Capacitance Characteristics
T
V
RRM
a
=25
℃
f=1MHz
V
RMS
Maximum Recurrent Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
12
20
14
13
30
21
250
14
40
28
40
15
50
35
50
16
60
60
18
80
56
10
100
70
115
150
105
150
120
200
140
Vol
42
1.0
30
40
120
Vol
P
D
1.4
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
(mW)
V
DC
20
30
200
80
100
200
Vol
Am
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
1.2
POWER DISSIPATION
Peak Forward Surge Current 8.3 ms single half sine-wave
150
Am
100
-55 to +150
℃/
PF
-55 to +125
50
-
65
to +175
℃
℃
CHARACTERISTICS
Maximum
1.0
Forward Voltage at 1.0A DC
0
5
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
V
F
10
15
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
REVERSE VOLTAGE
@T A=125℃
V
R
(V)
I
R
20
0.50
0
0.70
25
50
0.85
0.5
10
75
100
125
0.9
150
0.92
Vo
0
AMBIENT TEMPERATURE
T
a
(
℃
)
mAm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
