WILLAS
SOD-123
Dual Bias Resistor
Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
A
better reverse leakage current
CE
thermal resistance.
and
•
Low profile surface
= 200
W
application in order to
SOURCE RESISTANCE
mounted
optimize board space.
IC = 1.0 mA
•
Low power loss, high efficiency.
SOURCE RESISTANCE = 200
W
•
High current capability, low forward voltage drop.
capability.
•
High surge
IC = 0.5 mA
•
Guardring for overvoltage protection.
SOURCE RESISTANCE = 2.0 k
•
Ultra high-speed switching.
50
mA
IC =
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
SOURCE RESISTANCE = 2.0 k
IC
Halogen free product for packing code suffix "H"
= 100
mA
FM120-M
MMBT3906DW1T1
THRU
FM1200-M
•
Batch process design, excellent power dissipation
= 25°C, Bandwidth = 1.0 Hz)
(V
= –5.0 Vdc, T
offers
12
f = 1.0 kHz
10
8
6
4
2
0
0.1
0.2
Features
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
Package outline
NOISE FIGURE VARIATIONS
SOD-123H
Pb Free Produc
5.0
4.0
3.0
2.0
1.0
IC = 1.0 mA
0.146(3.7)
0.130(3.3)
IC = 0.5 mA
0.012(0.3) Typ.
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
0.071(1.8)
0.056(1.4)
IC = 50
mA
IC = 100
mA
0.040(1.0)
0.024(0.6)
0
: UL94-V0 rated flame retardant
0.2
1.0 2.0 4.0
10
20
0.1
•
Epoxy
0.4
plastic, SOD-123H
•
Case : Molded
f, FREQUENCY (kHz)
Mechanical data
40
100
•
Terminals :Plated
Figure 7.
solderable per MIL-STD-750
terminals,
Method 2026
,
0.031(0.8) Typ.
0.4
20
1.0 2.0
4.0
10
Rg, SOURCE RESISTANCE (k OHMS)
40
100
0.031(0.8) Typ.
Figure 8.
Dimensions in inches and (millimeters)
300
•
Polarity : Indicated by cathode band
h PARAMETERS
•
Mounting Position : Any
(V
= –10 Vdc, f = 1.0 kHz, TA = 25°C)
•
Weight : Approximated 0.011 gram
CE
100
hoe, OUTPUT ADMITTANCE (
m
mhos)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
70
h fe , DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
200
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
50
30
20
13
30
14
40
28
40
15
50
35
50
16
60
42
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
100
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
70
V
RRM
V
RMS
V
DC
I
O
12
20
14
20
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
50
21
10
30
7
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
Peak Forward Surge Current 8.3 ms single half sine-wave
IC,
(JEDEC method)
superimposed on rated load
COLLECTOR CURRENT (mA)
Typical Thermal Resistance (Note 2)
Figure 9. Current Gain
Typical Junction Capacitance (Note 1)
30
5.0 7.0 10
I
FSM
R
ΘJA
T
J
TSTG
5
0.1
0.2
1.0
0.3
0.5 0.7 1.0
2.0 3.0
30
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
h
re
, VOLTAGE FEEDBACK RATIO (x 10
-4
)
20
Operating Temperature Range
h ie , INPUT IMPEDANCE (k OHMS)
Storage Temperature Range
C
J
-55
10
+125
to
40
Figure 10. Output Admittance
120
-
65
to +175
-55 to +150
10
7.0
5.0
3.0
2.0
Maximum Forward Voltage at 1.0A DC
7.0
5.0
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
3.0
Maximum Average Reverse Current at @T A=25℃
2.0
Rated DC Blocking Voltage
I
R
NOTES:
1.0
0.7
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.5
2- Thermal Resistance From Junction to Ambient
0.3
0.2
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS [ WILLAS ELECTRONIC CORP ]
