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MMBT3906DW1T1 参数 Datasheet PDF下载

MMBT3906DW1T1图片预览
型号: MMBT3906DW1T1
PDF下载: 下载PDF文件 查看货源
内容描述: 双偏置电阻晶体管 [Dual Bias Resistor Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 6 页 / 349 K
品牌: WILLAS [ WILLAS ELECTRONIC CORP ]
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WILLAS
SOD-123
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
.087(2.20)
Ultra high-speed switching.
.071(1.80)
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Dual Bias Resistor
Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
FM120-M
MMBT3906DW1T1
THRU
FM1200-M
Pb Free Produc
Features
Package outline
SOD-123H
SOT-363
0.146(3.7)
0.130(3.3)
.004(0.10)MIN.
0.012(0.3) Typ.
.054(1.35)
.045(1.15)
0.071(1.8)
0.056(1.4)
.096(2.45)
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, SOD-123H
,
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
.071(1.80)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Polarity : Indicated by cathode band
Mounting Position : Any
.056(1.40)
Weight : Approximated 0.011 gram
.047(1.20)
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
.004(0.10)MAX.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
 
.030(0.75)
.021(0.55)
.010(0.25)
.003(0.08)
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
 
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
V
RRM
.016(0.40)
V
RMS
.004(0.10)
V
DC
I
O
 
I
FSM
14
20
.043(1.10)
.032(0.80)
12
20
13
30
21
14
40
28
40
15
50
35
50
16
60
42
60
1.0
 
30
40
120
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
30
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
 
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
Dimensions in inches and
 
(millimeters)
R
ΘJA
 
C
J
T
J
TSTG
 
-55 to +150
-55 to +125
 
-
65
to +175
 
CHARACTERISTICS
0.5 mm (min)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
@T A=125℃
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
 
 
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.4 mm (min)
 
 
1.9 mm
2012-
0
2012-06
0.65 mm 0.65 mm
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP