200mA
Surface Mount
Switching Diode
-
70V
1.0A SURFACE MOUNT SCHOTTKY
SOD-323
RECTIFIERS -20V- 200V
BARRIER
Package
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
FM120-M
MMDL6050
FM1200-M
THRU
PACKAGE
Pb Free Product
Features
Package outline
better
820
Ω
2.0 k
reverse leakage current and thermal resistance.
SOD-123H
+10 V
•
Low profile surface mounted application in order to
I
F
t
p
optimize board space.
t
r
t
0.1µF
0.146(3.7)
I
F
•
Low power loss, high efficiency.
100
µH
t
rr
t
0.130(3.3)
0.012(0.3) Typ.
10%
•
High current capability, low forward voltage drop.
•
High surge capability.
0.1
µF
•
Guardring for overvoltage protection.
90%
DUT
0.071(1.8)
i
= 1.0 mA
•
Ultra high-speed switching.
50
Ω
OUTPUT
50
Ω
INPUT
0.056(1.4)
I
R
OUTPUT PULSE
PULSE
INPUT SIGNAL
SAMPLING
•
Silicon epitaxial planar chip, metal silicon junction.
(I = I = 10 mA; MEASURED
GENERATOR
V
R
OSCILLOSCOPE
•
Lead-free parts meet environmental standards of
= 1.0 mA)
at i
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Notes:
Mechanical data
1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I
F
) of 10mA.
0.040(1.0)
Notes:
2. Input pulse is adjusted so I
R(peak)
is equal to 10mA.
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
Notes:
3. t
p
» t
rr
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
0.031(0.8) Typ.
,
•
Terminals :Plated terminals, solderable per
Time Equivalent Test Circuit
Figure 1. Recovery
MIL-STD-750
R(REC)
F
R
R(REC)
Method 2026
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
100
I
F
, FORWARD CURRENT (mA)
T
A
= 85°C
TYPICAL CHARACTERISTICS
10
Dimensions in inches and (millimeters)
I
R
, REVERSE CURRENT (µA)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
1.0
T
A
= 150°C
T
A
= 125°C
Ratings at 25℃ ambient temperature unless otherwise specified.
T
A
= –40°C
10
half wave, 60Hz, resistive of inductive load.
Single phase
For capacitive load, derate current by 20%
RATINGS
Marking Code
1.0
T
A
=
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
25°C
0.1
T
A
= 85°C
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
V
DC
0.8
12
20
14
20
13
30
21
0.01
14
40
28
40
15
50
35
50
10
T
A
= 55°C
16
60
18
80
56
80
30
10
100
70
100
40
115
150
105
150
50
120
200
140
200
42
60
T
A
= 25°C
1.0
20
V
30
1.2
V
0.1
Maximum Average Forward
0.4
Rectified Current
0.2
0.6
I
O
V
F
FORWARD
sine-wave
Peak Forward Surge Current 8.3
,
ms single half
VOLTAGE (VOLTS)
I
FSM
superimposed on rated load (JEDEC method)
Figure 2. Forward
1.0
0.001
0
Voltage
R
ΘJA
C
J
T
J
TSTG
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
0.68
Figure 3. Leakage Current
40
120
V
R
, REVERSE VOLTAGE (VOLTS)
30
-55 to +125
-55 to +150
℃
-
65
to +175
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
C
D
, DIODE CAPACITANCE (pF)
Storage Temperature Range
CHARACTERISTICS
0.64
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
V
F
I
R
0.50
0.70
0.5
10
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
0.60
@T A=125℃
0.56
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.52
0.2
0.4
0.6
0.8
1.0
1.2
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 4. Capacitance
2012-06
WILLAS ELECTRONIC CORP
2012-1
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
