1.0A
SURFACE MOUNT
ULTRA
FAST RECTIFIERS
-
600V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
mFN-323
PACKAGE
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Rating and characteristic
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
FIG.1-TYPICAL FORWARD
•
Ultra high-speed switching.
CHARACTERISTICS
•
Silicon epitaxial planar chip, metal silicon junction.
10
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
1
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
INSTANTANEOUS FORWARD CURRENT,(A)
0.1
Mechanical data
WILLAS
FM120-M
MURS160-FN3
FM1200-M
Pb Free Product
THRU
Features
Package outline
curves
SOD-123H
0.146(3.7)
FIG.2-TYPICAL FORWARD CURRENT
0.130(3.3)
0.012(0.3) Typ.
DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.040(1.0)
0.024(0.6)
0.071(1.8)
0.056(1.4)
0.2
0.4
0.6
Method 2026
0.8
1
1.2
1.4
1.6
1.8
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
For capacitive load, derate current by 20%
Marking Code
50
W
NONINDUCTIVE
10
W
NONINDUCTIVE
im
i
40
30
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
PEAK FORWAARD SURGE CURRENT,(A)
na
50
•
Polarity : Indicated by
FORWARD
band
cathode
VOLTAGE,(V)
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
ry
T
J
=25 C
•
Epoxy : UL94-V0 rated flame retardant
0.01
•
Case : Molded plastic, SOD-123H
,
0.001
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
25
50
75
100
125
150
0.031(0.8) Typ.
175
AMBIENT TEMPERATURE (°C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
Dimensions in inches and (millimeters)
8.3ms Single Half
Sine Wave
RECOVERY TIME CHARACTERISTICS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UNIT
RATINGS
20
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
(+)
(approx.)
Pr
el
V
RRM
V
RMS
12
20
14
13
30
21
10
14
40
28
40
15
50
35
50
16
60
18
80
56
10
100
70
JEDEC method
115
150
105
150
120
200
140
Volts
Volts
Volts
Amps
42
60
5
Maximum DC Blocking Voltage
D.U.T.
25Vdc
V
DC
PULSE
20
GENERATOR
I
O
(NOTE 2)
(+)
( )
30
0
80
100
50
200
100
Maximum Average Forward Rectified Current
( )
Peak Forward Surge Current
1
W
NON-
8.3 ms single
INDUCTIVE
1
(NOTE 1)
half sine-wave
OSCILLISCOPE
superimposed on rated load (JEDEC method)
I
FSM
1.0
10
NUMBER OF CYCLES AT 60Hz
30
Amps
℃/W
PF
℃
℃
NOTES: 1. Rise Time= 7ns
2)
Typical Thermal Resistance (Note
max., Input Impedance= 1 megohm.22pF.
R
ΘJA
2. Rise Time= 10ns max.,
Typical Junction Capacitance (Note 1)
Source Impedance= 50 ohms.
C
J
-55 to +125
70
60
Operating Temperature Range
Storage Temperature Range
T
J
TSTG
trr
|
|
|
|
@T
||
A=25℃
|
@T
|
A=125℃
40
120
FIG.5-TYPICAL JUNCTION CAPACITANCE
-55 to +150
-
65
to +175
CHARACTERISTICS
+0.5A
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at
Rated DC Blocking Voltage
0
-0.25A
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UNIT
JUNCTION CAPACITANCE,(pF)
V
F
I
R
0.50
50
40
30
20
10
0.70
0.5
10
0.85
0.9
0.92
Volts
mAmps
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
2012-06
WILLAS ELECTRONIC CORP.
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
