WILLAS
Low Capacitance Quad Array for ESD Protection Description
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
SOD-123H
SEMF3V3LC
FM120-M
THRU
FM1200-M
Pb Free Product
Features
Package outline
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
Figure 3 Reverse Leakage versus temperature
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
Figure 4 Capacitance
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Figure 5 8*20 Pulse Waveform
Maximum RMS Voltage
V
RMS
Maximum DC Blocking Voltage
V
RRM
V
DC
I
O
I
FSM
12
20
14
20
13
30
21
30
.004(0. 10 )
.01 8( 0. 46 )
14
40
28
40
Figure 6 Forward Voltage
35
42
56
50
60
1.0
30
40
120
80
15
50
16
60
18
80
10
100
70
100
115
150
105
150
120
200
140
200
SOT-353 Mechanical Data
.071(1.80)
Maximum Average Forward Rectified Current
Peak Forward Surge Current
( 2 . 2 0 )
single half sine-wave
.0 8 6
8.3 ms
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Storage Temperature Range
(
.05
TYP.
1.30
TYP.)
.031(0.80)
R
ΘJA
Typical Junction Capacitance (Note 1)
C
J
T
J
.039(1.00)
-55 to +125
-55 to +150
-
65
to +175
.031(0.80)
.039(1.00)
TSTG
.045(1.15)
. 0 5 3 ( 1. 35 )
. 07 1 ( 1 . 80 )
. 0 9 6 (2 .4 5 )
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
NOTES:
V
F
@T A=125℃
0.50
0.70
0.5
10
.006(0.15)
.014(0.35)
0.85
0.9
.031(0.80)
.043(1.10)
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
0.92
I
R
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.50BSC
.020BSC
.004(0.08)
.007(0.18)
Dimensions in inches and (millimeters)
2012-0
2012-06
WILLAS ELECTRONIC CORP.
CORP
WILLAS ELECTRONIC
WILLAS [ WILLAS ELECTRONIC CORP ]
