FM120-M
THRU
TK3906LLD03
WBFBP-03D Plastic-Encapsulate
RECTIFIERS -20V- 200V
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER
Transistors
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
CHARACTERISTICS
application in order to
ELECTRICAL
Low profile surface mounted
(T
a
=25℃ unless otherwise specified)
optimize board space.
•
Low power loss, high efficiency.
Parameter
Symbol
•
High current capability, low forward voltage drop.
Test conditions
•
High surge capability.
V
CB
=-5V,I
E
=0,f=1MHz
C
ob
Collector output capacitance
•
Guardring for overvoltage protection.
V
EB
=-0.5V,I
C
=0,f=1MHz
C
ib
Input capacitance
•
Ultra high-speed switching.
V
CE
=-5V,I
Noise figure
•
Silicon epitaxial planar chip, metal
NF
silicon junction.
c
=0.1mA,f=1KHz,R
S
=1KΩ
of
•
Lead-free parts meet environmental standards
=-3V, V
V
CC
t
d
Delay time
BE(OFF)
=0.5V,I
C
=-10mA ,
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
I
B1
=-1mA
t
r
Rise time
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
Min
0.146(3.7)
0.130(3.3)
Typ
Max
4.5
10
4
35
35
225
75
0.012(0.3) Typ.
Unit
pF
pF
dB
0.071(1.8)
0.056(1.4)
ns
ns
ns
0.040(1.0)
0.024(0.6)
Storage time
Fall time
Mechanical data
t
S
Method 2026
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
RATINGS
Marking Code
im
12
20
14
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
ina
V
RRM
V
RMS
V
DC
I
O
13
30
21
30
14
40
28
40
15
50
35
50
20
I
FSM
R
ΘJA
C
J
T
J
TSTG
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-
ry
16
60
42
60
1.0
30
t
f
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
V
CC
=-3V, I
C
=-10mA,I
B1
= I
B2
=- 1mA
ns
0.031(0.8) Typ.
0.031(0.8) Typ.
Dimensions in inches and (millimeters)
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Pr
el
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC CO
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS [ WILLAS ELECTRONIC CORP ]
