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W25Q16VSSIG 参数 Datasheet PDF下载

W25Q16VSSIG图片预览
型号: W25Q16VSSIG
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 16M位串行闪存 [16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 60 页 / 1415 K
品牌: WINBOND [ WINBOND ]
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W25Q16V
10.2.21 Erase Suspend (75h)
The Erase Suspend instruction “75h”, allows the system to interrupt a sector or block erase operation
and then read from or program data to, any other sector or block. The Write Status Register instruction
(01h) and Erase instructions (20h, 52h, D8h, C7h, 60h ) are not allowed during suspend. Erase
Suspend is valid only during the sector or block erase operation. If written during the chip erase or
program operation, the Erase Suspend instruction is ignored. A maximum of time of “tsus” (See AC
Characteristics) is required to suspend the erase operation. The BUSY bit in the Status register will
clear to 0 after Erase Suspend. A power-off during the suspend period will reset the device and release
the suspend state.
Figure 21. Erase Suspend Instruction Sequence
10.2.22 Erase Resume (7Ah)
The Erase Resume instruction must be written to resume the sector or block erase operation after an
Erase Suspend. After issued the BUSY bit in the status register will be set to a 1 and the sector or block
will complete the erase operation. Resume instructions will be ignored unless an Erase Suspend
operation is active.
Figure 22. Erase Resume Instruction Sequence
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