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W25Q16VSSIG 参数 Datasheet PDF下载

W25Q16VSSIG图片预览
型号: W25Q16VSSIG
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 16M位串行闪存 [16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 60 页 / 1415 K
品牌: WINBOND [ WINBOND ]
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W25Q16V
10.2.17 Sector Erase (20h)
The Sector Erase instruction sets all memory within a specified sector (4K-bytes) to the erased state of
all 1s (FFh). A Write Enable instruction must be executed before the device will accept the Sector Erase
Instruction (Status Register bit WEL must equal 1). The instruction is initiated by driving the /CS pin low
and shifting the instruction code “20h” followed a 24-bit sector address (A23-A0) (see Figure 2). The
Sector Erase instruction sequence is shown in figure 17.
The /CS pin must be driven high after the eighth bit of the last byte has been latched. If this is not done
the Sector Erase instruction will not be executed. After /CS is driven high, the self-timed Sector Erase
instruction will commence for a time duration of t
SE
(See AC Characteristics). While the Sector Erase
cycle is in progress, the Read Status Register instruction may still be accessed for checking the status
of the BUSY bit. The BUSY bit is a 1 during the Sector Erase cycle and becomes a 0 when the cycle is
finished and the device is ready to accept other instructions again. After the Sector Erase cycle has
finished the Write Enable Latch (WEL) bit in the Status Register is cleared to 0. The Sector Erase
instruction will not be executed if the addressed page is protected by the Block Protect (SEC, TB, BP2,
BP1, and BP0) bits (see Status Register Memory Protection table).
Figure 17. Sector Erase Instruction Sequence Diagram
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