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W25Q16VSSIG 参数 Datasheet PDF下载

W25Q16VSSIG图片预览
型号: W25Q16VSSIG
PDF下载: 下载PDF文件 查看货源
内容描述: 具有双路和四路SPI 16M位串行闪存 [16M-BIT SERIAL FLASH MEMORY WITH DUAL AND QUAD SPI]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 60 页 / 1415 K
品牌: WINBOND [ WINBOND ]
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W25Q16V
11. ELECTRICAL CHARACTERISTICS
11.1 Absolute Maximum Ratings
(1)
PARAMETERS
SYMBOL
CONDITIONS
RANGE
UNIT
Supply Voltage
Voltage Applied to Any Pin
Transient Voltage on any Pin
Storage Temperature
Lead Temperature
Electrostatic Discharge Voltage
Notes:
VCC
V
IO
V
IOT
T
STG
T
LEAD
V
ESD
Human Body Model
(3)
Relative to Ground
<20nS Transient
Relative to Ground
–0.6 to +4.0
–0.6 to VCC+0.4
–2.0V to VCC+2.0V
–65 to +150
See Note
(2)
–2000 to +2000
V
V
V
°C
°C
V
1. This device has been designed and tested for the specified operation ranges. Proper operation
outside of these levels is not guaranteed. Exposure to absolute maximum ratings may affect device
reliability. Exposure beyond absolute maximum ratings may cause permanent damage.
2. Compliant with JEDEC Standard J-STD-20C for small body Sn-Pb or Pb-free (Green) assembly and
the European directive on restrictions on hazardous substances (RoHS) 2002/95/EU.
3. JEDEC Std JESD22-A114A (C1=100pF, R1=1500 ohms, R2=500 ohms).
11.2 Operating Ranges
PARAMETER
SYMBOL
CONDITIONS
SPEC
MIN
MAX
UNIT
Supply
Voltage
(1)
VCC
F
R
= 80MHz, f
R
= 50MHz
F
R
= 50MHz (for E3h
command)
Commercial
Industrial
2.7
3.0
0
–40
3.6
3.6
+70
+85
V
Ambient Temperature,
Operating
Note:
T
A
°C
1. VCC voltage during Read can operate across the min and max range but should not exceed ±10%
of the programming (erase/write) voltage.
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