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W28V400BT85C 参数 Datasheet PDF下载

W28V400BT85C图片预览
型号: W28V400BT85C
PDF下载: 下载PDF文件 查看货源
内容描述: 4M ( 512K ×8 / 256K ×16 ) SMARTVOLTAGE FLASH MEMORY [4M(512K x 8/256K x 16) SMARTVOLTAGE FLASH MEMORY]
分类和应用: 电视
文件页数/大小: 48 页 / 1648 K
品牌: WINBOND [ WINBOND ]
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W28V400B/T
The access time is 85ns (t
AVQV
) over the commercial temperature range (0° C to +70° C) and V
DD
supply voltage range of 4.75V to 5.25V. At lower V
DD
voltages, the access times are 90ns (4.5V to
5.5V), 100 nS (3.0V to 3.6V) and 120 nS (2.7V to 3.6V).
The Automatic Power Savings (APS) feature substantially reduces active current when the device is in
static mode (addresses not switching). In APS mode, the typical I
CCR
current is 1mA at V
DD
= 5V
.
When #CE and #RESET pins are at V
DD
, the I
CC
CMOS standby mode is enabled. When the #RESET
pin is at V
SS
, deep power-down mode is enabled which minimizes power consumption and provides
write protection during reset. A reset time (tPHQV) is required from #RESET switching high until
outputs are valid. Likewise, the device has a wake time (tPHEL) from #RESET-high until writes to the
CUI are recognized. With #RESET at V
SS
, the WSM is reset and the status register is cleared.
The device is available in 48-lead TSOP (Thin Small Outline Package, 1.2 mm thick). Pinout is shown
in Figure 2.
4. BLOCK DIAGRAM
DQ0 -DQ15
Output Buffer
Input Buffer
I/O Logic
Identifier
Register
Output
Multiplexer
Status
Register
Data
Register
Command
User
Interface
A-1
VDD
#BYTE
#CE
#WE
#OE
#RESET
#WP
Data
Comparator
Parameter Block 0
Parameter Block 1
Parameter Block 2
Parameter Block 3
Parameter Block 4
Parameter Block 5
A0-A17
Boot Block 0
Boot Block 1
Input
Buffer
Y
Decoder
Y-Gating
Main Block 0
Main Block 1
Write
State
Machine
Main Block 5
Main Block 6
RY/#BY
Program/Erase
Voltage Switch
VPP
Address
Latch
X
Decoder
32K-Word
(64K-Byte)
Main Blocks
x7
VDD
VSS
Address
Counter
Figure 1. Block Diagram
-5-
Publication Release Date: April 11, 2003
Revision A4