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W981616AH-8 参数 Datasheet PDF下载

W981616AH-8图片预览
型号: W981616AH-8
PDF下载: 下载PDF文件 查看货源
内容描述: X16 SDRAM\n [x16 SDRAM ]
分类和应用: 存储内存集成电路光电二极管动态存储器时钟
文件页数/大小: 40 页 / 1275 K
品牌: WINBOND [ WINBOND ]
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W981616AH
Stop Command is defined by having RAS and CAS high with CS and WE low at the rising edge of
the clock. The data DQs go to a high impedance state after a delay, which is equal to the
CAS
Latency in a burst read cycle, interrupted by Burst Stop. If a Burst Stop Command is issued during a
full page burst write operation, then any residual data from the burst write cycle will be ignored.
Addressing Sequence of Sequential Mode
A column access is performed by increasing the address from the column address, which is input to
the device. The disturb address is varied by the Burst Length as shown in Table 2.
Table 2 Address Sequence of Sequential Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Access Address
n
n+1
n+2
n+3
n+4
n+5
n+6
n+7
BL = 8 (disturb addresses are A0, A1 and A2)
No address carry from A2 to A3
Burst Length
BL = 2 (disturb address is A0)
No address carry from A0 to A1
BL = 4 (disturb addresses are A0 and A1)
No address carry from A1 to A2
Addressing Sequence of Interleave Mode
A column access is started in the input column address and is performed by inverting the address bit
in the sequence shown in Table 3.
Table 3 Address Sequence of Interleave Mode
DATA
Data 0
Data 1
Data 2
Data 3
Data 4
Data 5
Data 6
Data 7
Access Address
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1
A0
A8 A7 A6 A5 A4 A3 A2
A1
A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
A8 A7 A6 A5 A4 A3 A2 A1 A0
BL = 8
BL = 4
Bust Length
BL = 2
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