WCD6C60
Electrical Characteristics
(T
C
=25
℃
unless otherwise noted)
Symbol
I
DRM
V
TM
I
GT
Parameter
Repetitive Peak Off-State
Current
Peak On-State Voltage (1)
Gate Trigger Current (2)
Test Conditions
V
AK
=V
DRM
T
C
=25℃
T
C
=125℃
ITM=9A, tp=380㎲
V
AK
=6V(DC),R
L
=10Ω
T
C
=125℃
V
D
=6V(DC),R
L
=10Ω
T
C
=125℃
V
AK
=12V,R
L
=100Ω T
C
=125℃
Linear slope up to
V
D
=67%V
DRM
, gate open
T
J
=125℃
I
T
=100mA, Gate open
T
C
=25℃
I
G
=1.2 I
GT
Value
Units
Min Typ Max
-
-
-
-
-
-
1.4
-
10
200
1.6
15
μA
μA
V
mA
V
GT
V
GD
Gate Trigger Voltage (2)
Non-Trigger Gate Voltage (1)
Critical Rate of Rise Off-State
Voltage
-
0.2
-
1.5
V
V
dv/dt
200
-
-
V/㎲
I
H
I
L
Holding Current
Latching Current
-
-
-
50
20
-
mA
mA
*Notes:
1.Pulse Width
≤1.0ms,Duty cycle≤1%
2.R
GK
Current not Included in measurement.
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
