WFF12N60
WFF12N6
N60
Electrical Characteristics (Tc = 25°C)
Electrica Characteristi
25°
Characteristics
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Turn−on Rise time
Switchi
ng time
Turn−on Delay time
Turn−off Fall time
Turn−off Delay time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
Symbol
I
GSS
V
(BR)GSS
I
DSS
V
(BR)DSS
ΔBV
DSS
/
ΔT
J
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
t
r
t
on
t
f
t
off
Qg
Qgs
Qgd
Test Condition
V
GS
= ±30 V, VDS = 0 V
I
G
= ±10 μA, VDS = 0 V
V
DS
= 600 V, VGS = 0 V
I
D
= 250 μA, VGS = 0 V
I
D
=250μA, Referenced to 25
℃
V
DS
= 10 V, ID =250 μA
V
GS
= 10 V, ID =6.0A
V
DS
= 50 V, ID =6.0A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
=300 V,
I
D
=12 A
R
G
=9.1 Ω
R
D
=31 Ω
V
DD
= 400 V,
V
GS
= 10 V,
I
D
=1 A
(Note4,5)
(Note4,5)
Min
-
±30
-
600
-
3
-
-
-
-
-
-
-
-
-
-
-
-
Type
-
-
-
-
0.5
-
-
15
1790
23
175
133
80
100
233
39
8.5
19
Max
±100
-
1
-
-
4.5
0.65
Unit
nA
V
μA
V
V/
℃
V
Ω
S
2355
31
232
175
100
ns
160
310
52
-
-
nC
pF
Source−Drain Ratings and Characteristics (Ta = 25°C)
Source−
Ratin
Charact eristi
Characteristics
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
I
DRP
V
DSF
t
rr
Q
rr
Test Condition
-
-
I
DR
= 12 A, VGS = 0 V
I
DR
= 12 A, VGS = 0 V,
dI
DR
/ dt = 100 A / μs
Min
-
-
-
-
-
Type
-
-
-
418
4.85
Max
12
48
1.4
-
-
Unit
A
A
V
ns
μC
Note
1.Repeativity rating :pulse width limited by junction temperature
2.L=11.2mH,I
AS
=12A,V
DD
=50V,R
G
=25Ω,Starting T
J
=25℃
3.I
SD
≤12A,di/dt≤300A/us, V
DD
<BV
DSS
,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2 /7
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
