WFF20N60S
WFF20N60S
Silicon N-Channel MOSFET
Features
�½
�½
�½
�½
�½
20A,600V,R
DS(on)
(Max0.20Ω)@V
GS
=10V
Ultra-low Gate charge(Typical 84.4nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM.
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GS
E
AS
I
AR
E
AR
P
D
T
J
T
stg
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Drain Current Pulsed（Duration is limited by T
jmax
.)
Gate to Source Voltage
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
Repetitive Avalanche Energy (Frequency is limited by T
jmax
.)
Total Power Dissipation(@Tc=25℃)
Junction Temperature
Storage Temperature
Parameter
Value
600
20
50
±20
800
20
1
34.5
150
-55~150
Units
V
A
A
V
mJ
A
mJ
W
℃
℃
Thermal Characteristics
Symbol
R
QJC
R
QJA
Parameter
Thermal Resistance , Junction -to -Case
Thermal Resistance , Junction -to -Ambient
Value
Min
-
-
Typ
-
-
Max
3.6
60
Units
℃/W
℃/W
Rev.A Apr.2012
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
