WFF20N60S
Electrical Characteristics(Tc=25℃)
Characteristics
Symbol
IGSS
Test Condition
VGS=±30V,VDS=0V
IG=±10 µA,VDS=0V
VDS=600V,VGS=0V
VDS=600V,TJ=150℃
ID=250µA,VGS=0V
VDS=VGS,ID=250uA
VGS=10V,ID=13.1A
VDS≥30V,ID=20A
VDS=70V,
Min Type Max Unit
Gate leakage current
-
-
±100
nA
V
Gate-source breakdown voltage
V(BR)GSS
±30
-
-
-
1
-
µA
µA
V
Drain cut -off current
IDSS
-
-
100
-
Drain -source breakdown voltage
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
V(BR)DSS
VGS(th)
RDS(ON)
gfs
600
-
2.5
-
3.5
0.20
-
V
-
-
-
-
-
0.16
18.8
2140
18
300
Ω
S
Ciss
VGS=0V,
Reverse transfer capacitance
Output capacitance
Crss
pF
nC
f=1MHz
Coss
Total gate charge(gate-source
plus gate-drain)
VDS=480V,
VGS=10V,
ID=20.7A
Qg
-
84.4
-
Gate-source charge
Qgs
Qgd
-
-
9.1
-
-
Gate-drain("miller") Charge
14.6
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Symbol Test Condition
Min Type Max Unit
Continuous drain reverse current
Pulse Diode Forward Current
Body Diode Voltage
IS
-
-
20
60
A
TC=25℃
ISM
VDSF
Tj=25 ISD=20A,VGS=0V
-
0.96
1.2
V
2/5
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
