WFF20N60
WFF20N60
Silicon N-Channel MOSFET
Features
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20A,600V,R
DS(on)
(Max0.39Ω)@V
GS
=10V
Ultra-low Gate charge(Typical 150nC)
Fast Switching Capability
100%Avalanche Tested
Maximum Junction Temperature Range(150℃)
General Description
This Power MOSFET is produced using Winsemi's advancedplanar
stripe,VDMOS technology.this latest technology has beenespecially
designed to minimize on-state resistance, have a high rugged avalanche
characteristics .This devices is specially wellsuited for AC-DC switching
power supplies, DC-DC powerConverters high voltage H-bridge motor
drive PWM
Absolute Maximum Ratings
Symbol
V
DSS
I
D
Continuous Drain Current(@Tc=100℃)
I
DM
V
GS
E
AR
dv/dt
P
D
T
J
,T
stg
T
L
Drain Current Pulsed
Gate to Source Voltage
Repetitive Avalanche Energy
Peak Diode Recovery dv /dt
Total Power Dissipation(@Tc=25℃)
Junction and Storage Temperature
Channel Temperature
(Note1)
(Note3)
(Note1)
15
80
±30
30
5.0
43
-55~150
300
A
A
V
mJ
V/ ns
W
℃
℃
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
Parameter
Value
600
20
Units
V
A
Thermal Characteristics
Symbol
R
QJC
Parameter
Thermal Resistance , Junction -to -Case
Value
Min
-
Typ
-
Max
0.25
Units
℃/W
Rev.A Mar.2011
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
