WFF20N60
WFF20
20N
Electrical Characteristics(Tc=25℃)
Characteristics
Gate leakage current
Gate-source breakdown voltage
Drain cut -off current
Drain -source breakdown voltage
Breakdown voltage Temperature
coefficient
Gate threshold voltage
Drain -source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Turn-on time
Switching time
Fall time
Turn-off time
Total gate charge(gate-source
Qg
plus gate-drain)
Gate-source charge
Gate-drain("miller") Charge
Qgs
Qgd
V
GS
=10V,
nC
I
D
=10A
-
-
30
60
40
85
Symbol
I
GSS
V
(BR)GSS
I
DSS
Test Condition
V
GS
=±30V,V
DS
=0V
I
G
=±10 µA,V
DS
=0V
V
DS
=600V,V
GS
=0V
V
GS
=0V,T
J
=125℃
Min
-
±30
-
-
600
-
Type
-
-
-
-
-
0.5
-
-
18
4500
140
420
45
20
40
70
Max
±100
-
200
1000
-
-
5
0.39
-
Unit
nA
V
µA
µA
V
V/℃
V
Ω
S
V
(BR)DSS
△BV
DSS
/
△T
J
V
GS(th)
R
DS(ON)
gfs
C
iss
C
rss
C
oss
tr
ton
tf
Toff
I
D
=250µA,V
GS
=0V
I
D
=250µA,Referenced
to 25℃
V
DS
=V
GS,
I
D
=4mA
V
GS
=10V,I
D
=10A
V
DS
≥10V,I
D
=10A
V
DS
=25V,
V
GS
=0V,
f=1MHz
V
GS
=10V
V
DS
=300V,
I
D
=10A
R
G
=2.00Ω
3
-
11
-
-
-
-
-
-
-
pF
60
40
60
90
ns
V
DS
=300V,
-
150
170
Source-Drain Ratings and Characteristics(Ta=25℃)
Characteristics
Continuous drain reverse current
Forward voltage(diode)
Reverse recovery time
Reverse recovery charge
Symbol
I
DR
V
DSF
trr
Qrr
Test Condition
-
I
DR
=I
S
A,V
GS
=0V
I
DR
=10A,V
GS
=0V,
dI
DR
/ dt =100 A / µs
Min
-
-
-
-
Type
-
-
Max
20
1.5
250
Unit
A
V
ns
µC
1
-
Note 1.Pulse Test:Pulse Width≤300us,Duty Cycle≤2%
2. Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/3
Steady, keep you advance
WINSEMI [ SHENZHEN WINSEMI MICROELECTRONICS CO., LTD ]
