FP2189
1-Watt HFET
The Communications Edge
TM
Product Information
Product Features
50 – 4000 MHz
+30 dBm P1dB
+43 dBm Output IP3
High Drain Efficiency
18.5 dB Gain @ 900 MHz
Lead-free/Green/
RoHS-compliant
SOT-89 Package
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MTTF >100 Years
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Product Description
The FP2189 is a high performance 1-Watt HFET
(Heterostructure FET) in a low-cost SOT-89 surface-
mount package. This device works optimally at a drain
bias of +8 V and 250 mA to achieve +43 dBm output IP3
performance and an output power of +30 dBm at 1-dB
compression, while providing 18.5 dB gain at 900 MHz.
The device conforms to WJ Communications’ long
history of producing high reliability and quality
components. The FP2189 has an associated MTTF of
greater than 100 years at a mounting temperature of 85
°C
and is available in both the standard SOT-89 package and
the
environmentally-friendly
lead-free/green/RoHS-
compliant and green SOT-89 package. All devices are
100% RF & DC tested.
The product is targeted for use as driver amplifiers for
wireless infrastructure where high performance and high
efficiency are required.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
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Mobile Infrastructure
CATV / DBS
W-LAN / ISM
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input / Gate
Output / Drain
Ground
Pin No.
1
3
2, 4
Specifications
DC Parameter
Saturated Drain Current, I
dss
Transconductance, G
m
Pinch Off Voltage, V
p (2)
(1)
Typical Performance
(5)
Units Min
mA
mS
V
445
Typ
615
280
-2.1
Max
705
Parameter
Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(4)
Noise Figure
IS-95 Channel Power
@ -45 dBc ACPR
Units
MHz
dB
dB
dB
dBm
dBm
dB
dBm
Typical
915 1960 2140 2450
18.7 15.6 14.4 13.0
21
14.6
23
26
8.3
12
11.5
9.6
+30.2 +30.4 +30.6 +31.2
+42.8 +43.5 +43.9 +45.3
4.5
3.4
4.5
+24.5 +23.8
+22.2
RF Parameter
(3)
Operational Bandwidth
Test Frequency
Small Signal Gain
SS Gain (50
Ω,
unmatched)
Maximum Stable Gain
Output P1dB
Output IP3
(4)
Noise Figure
Drain Bias
Units Min
MHz
MHz
dB
dB
dB
dBm
dBm
dB
50
Typ
800
18.5
Max
4000
15
24
+30
+43
4.5
+8V @ 250 mA
21
W-CDMA Ch. Power
@ -45 dBc ACLR
Drain Voltage
Drain Current
V
mA
+8
250
5. Typical parameters represent performance in a tuned application circuit.
1. I
dss
is measured with V
gs
= 0 V, V
ds
= 3 V.
2. Pinch-off voltage is measured when I
ds
= 2.4 mA.
3. Test conditions unless otherwise noted: T = 25 ºC, V
DS
= 8 V, I
DQ
= 250 mA in an application circuit
with Z
L
= Z
LOPT
, Z
S
= Z
SOPT
(optimized for output power).
4. 3OIP measured with two tones at an output power of +15 dBm/tone separated by 1 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
DC Power
RF Input Power (continuous)
Drain to Gate Voltage, V
dg
Junction Temperature
Rating
-40 to +85
°C
-55 to +125
°C
4.0 W
6 dB above Input P1dB
+16 V
+220
°C
Ordering Information
Part No.
FP2189-G
FP2189-PCB900S
FP2189-PCB1900S
FP2189-PCB2140S
Description
1 -Watt HFET
(lead-free/green/RoHS-compliant SOT-89 package)
870 – 960 MHz Application Circuit
1930 – 1990 MHz Application Circuit
2110 – 2170 MHz Application Circuit
Operation of this device above any of these parameters may cause permanent damage.
Specifications and information are subject to change without notice.
WJ Communications, Inc
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Phone 1-800-WJ1-4401
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FAX: 408-577-6621
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e-mail: sales@wj.com
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Web site: www.wj.com
Page 1 of 12
October 2006
WJCI [ WJ COMMUNICATION. INC. ]
