FCX1053A
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Collector-emitter
breakdown voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter cut-off
current
Collector-emitter
saturation voltage
Symbol
V
(BR)CBO
V
CES
V
CEO
V
CEV
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
Min.
150
150
75
150
5
Typ.
250
250
100
250
8.8
0.9
0.3
1.5
21
55
150
160
350
Base-emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
270
300
300
40
900
825
440
450
450
60
20
Switching times
t
on
t
off
Transition frequency
Output capacitance
f
T
C
OBO
162
900
140
21
30
2%.
Max.
Unit
V
V
V
V
V
Conditions
I
C
= 100 A
I
C
= 100 A
I
C
= 10mA
I
C
= 100 A, V
EB
= 1V
I
E
= 100 A
V
CB
= 120V
V
EB
= 4V
V
CES
= 120V
I
C
= 0.2A, I
B
= 20mA
(*)
I
C
= 0.5A, I
B
= 20mA
I
C
= 1A, I
B
= 10mA
I
C
= 2A, I
B
= 100mA
I
C
= 4.5A, I
B
= 200mA
I
C
= 3A, I
B
= 100mA
I
C
= 3A, V
CE
= 2V
I
C
= 10mA, V
CE
= 2V
10
10
10
30
75
200
210
440
1000
950
nA
nA
nA
mV
mV
mV
mV
mV
mV
mV
1200
I
C
= 0.5A, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
I
C
= 4.5A, V
CE
= 2V
I
C
= 10A, V
CE
= 2V
ns
ns
MHz
pF
I
C
= 2A, I
B1
= I
B2
=
V
CC
= 50V
I
C
= 2A, I
B1
= I
B2
=
V
CC
= 50V
20mA,
20mA,
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
V
CB
= 10V, f = 1MHz
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300 s. Duty
© Zetex Semiconductors plc 2006
ZETEX [ ZETEX SEMICONDUCTORS ]
