FZT717
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
Emitter-base breakdown
voltage
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation
voltage
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
Min.
-12
-12
-5
-100
-100
-20
-150
-320
Base-emitter saturation
voltage
Base-emitter turn-on voltage
V
BE(sat)
V
BE(on)
300
300
160
60
45
Transition frequency
Output capacitance
Switching times
f
T
C
OBO
t
on
t
off
80
110
21
70
130
2%
Typ.
Max.
Unit
V
V
V
nA
nA
mV
Conditions
I
C
= 100µA
I
C
= 10mA
I
E
= 100µA
V
CB
= -10V
V
EB
= -4V
I
C
=-0.1A, I
B
=-10mA
(*)
I
C
=-1A, I
B
=-10mA
I
C
=-3A, I
B
=-50mA
-1050
-1000
mV
mV
I
C
=-3A, I
B
=-50mA
I
C
=-3A, V
CE
=-2V
I
C
=-10mA, V
CE
=-2V
I
C
=-100mA, V
CE
=-2V
I
C
=-3A, V
CE
=-2V
I
C
=-8A, V
CE
=-2V
I
C
=-10A, V
CE
=-2V
Static forward current transfer h
FE
ratio
MHz
30
pF
ns
ns
I
C
=-50mA, V
CE
=-10V
f = 100MHz
V
CB
=-10V, f = 1MHz
V
CC
=-6V, I
C
=-2A
I
B1
= I
B2
=50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300µs. Duty cycle
© Zetex Semiconductors plc 2006
ZETEX [ ZETEX SEMICONDUCTORS ]
