ZVN3306A
TYPICAL CHARACTERISTICS
9V
VGS=10V
1.0
10
8
8V
7V
0.8
0.6
0.4
0.2
6
6V
5V
ID=
1A
4
4V
3V
2
0.5A
0.25A
0
0
0
2
4
6
8
10
0
2
4
6
8
10
VDS - Drain Source Voltage (Volts)
VGS -Gate Source Voltage (Volts)
Saturation Characteristics
Voltage Saturation Characteristics
1.0
10
VDS=10V
0.8
0.6
0.4
0.2
5
ID=
1A
0.5A
0.25A
1
0
1
10
20
0
2
4
6
8
10
VGS-Gate Source Voltage (Volts)
VGS-Gate Source Voltage (Volts)
Transfer Characteristics
On-resistance vs gate-source voltage
2.4
200
180
160
140
ID=-0.5A
2.2
2.0
1.8
1.6
R
e
c
n
ta
s
i
s
e
e R
120
100
80
VDS=18V
rc
u
o
1.4
1.2
1.0
0.8
0.6
-S
n
ai
Dr
60
40
20
0
0.4
-80 -60 -40 -20
0 20 40 60 80 100 120 140 160
0
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
ID(on) - Drain Current (Amps)
T-Temperature (C°)
Transconductance v drain current
Normalised RDS(on) and VGS(th) vs Temperature
3-376
ZETEX [ ZETEX SEMICONDUCTORS ]
