ZXMN10A08E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V GS =10V; T A =25°C (b)
V GS =10V; T A =70°C (b)
V GS =10V; T A =25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T A =25°C (a)
Linear Derating Factor
Power Dissipation at T A =25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V DSS
V GS
ID
LIMIT
100
20
1.9
1.5
1.5
8.6
2.5
8.6
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
I DM
IS
I SM
PD
PD
T j :T stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.02, pulse width 300 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph
ISSUE 5 - JANUARY 2005
SEMICONDUCTORS
2
ZETEX [ ZETEX SEMICONDUCTORS ]
