ZXMN10A08E6
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
V (BR)DSS
I DSS
I GSS
V GS(th)
2.0
0.25
0.30
5.0
S
100
0.5
100
V
A
nA
V
I D =250 A, V GS =0V
V DS =100V, V GS =0V
V GS = 20V, V DS =0V
I =250 A, V DS = V GS
D
V GS =10V, I D =3.2A
V GS =6V, I D =2.6A
V DS =15V,I D =3.2A
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
Static Drain-Source On-State Resistance R DS(on)
(1)
Forward Transconductance (1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V SD
t rr
Q rr
0.87
27
32
t d(on)
tr
t d(off)
tf
Qg
Qg
Q gs
Q gd
3.4
2.2
8
3.2
4.2
7.7
1.8
2.1
C iss
C oss
C rss
405
28.2
14.2
g fs
pF
pF
pF
V DS =50 V, V GS =0V,
f=1MHz
ns
ns
ns
ns
nC
nC
nC
nC
V DS =50V,V GS =10V,
I
D
=1.2A
V DS =50V,V GS =5V,
I
D
=1.2A
V DD =30V, I D =1.2A
R G
≅6.0
, V GS =10V
0.95
V
ns
nC
T J =25°C, I S =3.2A,
V GS =0V
T J =25°C, I F =1.2A,
di/dt= 100A/ s
NOTES
(1) Measured under pulsed conditions. Width
=
300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 5 - JANUARY 2005
SEMICONDUCTORS
4
ZETEX [ ZETEX SEMICONDUCTORS ]
