ZXMN3A04DN8
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
SYMBOL
V
D SS
V
GS
LIMIT
30
20
7.6
6.0
5.8
25
2.5
25
1.25
10
1.8
14
2.1
17
-55 to +150
UNIT
V
V
A
Continuous Drain Current (V
GS
=10V; T
A
=25°C)(b)(d) I
D
(V
GS
=10V; T
A
=70°C)(b)(d)
(V
GS
=10V; T
A
=25°C)(a)(d)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)(c)
Power Dissipation at T
A
=25°C (a)(d)
Linear Derating Factor
Power Dissipation at T
A
=25°C (a)(e)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
I
DM
I
S
I
SM
P
D
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (a)(e)
Junction to Ambient (b)(d)
SYMBOL
R
θJ
A
R
θJ
A
R
θJ
A
VALUE
100
70
60
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 10 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10µs - pulse width limited by maximum
junction temperature. Refer to Transcient Thermal Inpedance graph.
(d) For device with one active die
(e) For device with two active die running at equal power.
PROVISIONAL ISSUE A - AUGUST 2001
2
ZETEX [ ZETEX SEMICONDUCTORS ]
