ZXMN3A04DN8
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State Resistance (1)
Forward Transconductance (3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING(2)
(3)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
V
SD
t
rr
Q
rr
20.5
41.5
0.95
V
ns
nC
T
J
=25°C, I
S
=6A,
V
G S
=0V
T
J
=25°C, I
F
=6A,
di/dt= 100A/µs
t
d (o n )
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
5.5
8.7
33
8.5
19.4
35.7
5.5
7.0
ns
ns
ns
ns
nC
nC
nC
nC
V
D S
=15V,V
G S
=10V,
I
D
=3.5A
V
D S
=15V,V
G S
=5V,
I
D
=3.5A
V
D D
=15V, I
D
=6A
R
G
=6.0Ω, V
G S
=10V
C
is s
C
os s
C
rs s
1800
289
178
pF
pF
pF
V
D S
=25V, V
G S
=0V,
f=1MHz
V
(BR) DSS
I
D SS
I
G SS
V
GS(th)
R
DS(on)
g
fs
17.5
1.0
0.02
0.03
30
0.5
100
V
µA
nA
V
Ω
Ω
S
I
D
=250µA, V
G S
=0V
V
D S
=30V, V
G S
=0V
V
G S
=±20V, V
DS
=0V
I =250µA, V
DS
= V
G S
D
SYMBOL MIN.
TYP.
MAX.
UNIT CONDITIONS.
V
G S
=10V, I
D
=12.6A
V
G S
=4.5V, I
D
=10.6A
V
D S
=15V,I
D
=6A
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
PROVISIONAL ISSUE A - AUGUST 2001
3
ZETEX [ ZETEX SEMICONDUCTORS ]
