ZXTD6717E6
PNP TRANSISTOR
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-25
-55
-110
-160
-185
-0.99
-0.85
300
300
200
125
75
30
490
450
340
250
140
80
220
15
50
135
MHz
pF
ns
ns
MIN.
-12
-12
-5
-10
-10
-10
-40
-100
-175
-215
-240
-1.10
-1.0
TYP.
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
mV
mV
V
V
CONDITIONS.
I
C
=-100 A
I
C
=-10mA*
I
E
=-100 A
V
CB
=-10V
V
EB
=-4V
V
CES
=-10V
I
C
=-100mA, I
B
=-10mA*
I
C
=-250mA, I
B
=-10mA*
I
C
=-500mA, I
B
=-10mA*
I
C
=-1A, I
B
=-50mA*
I
C
=-1.25A, I
B
=-100mA*
I
C
=-1.25A, I
B
=-100mA*
I
C
=-1.25A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-100mA, V
CE
=-2V*
I
C
=-500mA, V
CE
=-2V*
I
C
=-1.25A, V
CE
=-2V*
I
C
=-2A, V
CE
=-2V*
I
C
=-3A, V
CE
=-2V*
I
C
=-50mA, V
CE
=-10V
f=100MHz
V
CB
=-10V, f=1MHz
I
C
=-1A, V
CC
=-10V
I
B1
=I
B2
=-100mA
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 2 - JULY 2001
4
ZETEX [ ZETEX SEMICONDUCTORS ]
