ZXTD6717E6
PNP TYPICAL CHARACTERISTICS
0.4
+
25°C
0.4
IC/IB =
50
0.3
0.3
V
CE(sat)
- (V)
V
CE(sat)
- (V)
IC/IB=10
IC/IB=50
IC/IB=100
0.2
0.2
-55°C
+
25°C
+
100°C
+
150°C
0.1
0.1
0
1m
10m
100m
1
10
0
1m
10m
100m
1
10
I
C
- Collector Current (A)
V
CE(sat)
v I
C
I
C
- Collector Current (A)
V
CE(sat)
v I
C
800
V CE =
2V
1.0
0.8
IC/IB =
50
h
FE
- Typical Gain
600
+
100°C
V
BE(sat)
- (V)
0.6
0.4
0.2
-55°C
+
25°C
+
100°C
+
150°C
400
+
25°C
200
-55°C
0
1m
10m
100m
1
I
C
- Collector Current (A)
10
0
1m
10m
100m
1
10
h
FE
v I
C
I
C
- Collector Current (A)
V
BE(sat)
v I
C
1.0
0.8
10
I
C
- Collector Current (A)
V
BE(on)
- (V)
1
DC
1s
100ms
10ms
1ms
100µs
0.6
0.4
0.2
0
-55°C
+
25°C
+
100°C
+
150°C
100m
1m
10m
100m
1
10
10m
100m
1
10
100
I
C
- Collector Current (A)
V
BE(on)
v I
C
V
CE
- Collector Emitter Voltage (V)
Safe Operating Area
ISSUE 2 - JULY 2001
6
ZETEX [ ZETEX SEMICONDUCTORS ]
