U634H256
DC Characteristics
Symbol
V
CC
I
OH
I
OL
V
CC
V
OH
V
OL
V
CC
High
Low
Output Leakage Current
High at Three-State- Output
Low at Three-State- Output
I
OHZ
I
OLZ
I
IH
I
IL
V
IH
V
IL
V
CC
V
OH
V
OL
Conditions
= 4.5 V
=-4 mA
= 8 mA
= 4.5 V
= 2.4 V
= 0.4 V
= 5.5 V
= 5.5 V
= 0V
= 5.5 V
= 5.5 V
= 0V
1
-1
µA
µA
1
-1
µA
µA
Min.
Max.
Unit
Output High Voltage
Output Low Voltage
Output High Current
Output Low Current
Input Leakage Current
V
OH
V
OL
I
OH
I
OL
2.4
0.4
-4
8
V
V
mA
mA
SRAM Memory Operations
Symbol
Alt.
t
AVAV
t
AVQV
t
ELQV
t
GLQV
t
EHQZ
t
GHQZ
t
ELQX
t
GLQX
t
AXQX
t
ELICCH
t
EHICCL
IEC
t
cR
t
a(A)
t
a(E)
t
a(G)
t
dis(E)
t
dis(G)
t
en(E)
t
en(G)
t
v(A)
t
PU
t
PD
5
0
3
0
25
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
25
25
25
10
10
10
5
0
3
0
35
35
35
35
15
13
13
5
0
3
0
45
45
45
45
20
15
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
Switching Characteristics
No.
Read Cycle
1 Read Cycle Time
f
2 Address Access Time to Data Valid
g
3 Chip Enable Access Time to Data Valid
4 Output Enable Access Time to Data Valid
5 E HIGH to Output in High-Z
h
6 G HIGH to Output in High-Z
h
7 E LOW to Output in Low-Z
8 G LOW to Output in Low-Z
9 Output Hold Time after Address Change
10 Chip Enable to Power Active
e
11 Chip Disable to Power Standby
d, e
e:
f:
g:
h:
Parameter guaranteed but not tested.
Device is continuously selected with E and G both LOW.
Address valid prior to or coincident with E transition LOW.
Measured
±
200 mV from steady state output voltage.
4
April 21, 2004
ZMD [ Zentrum Mikroelektronik Dresden AG ]
