U634H256
Read Cycle 1: Ai-controlled (during Read cycle: E = G = V
IL
, W = V
IH
)
f
t
cR
(1)
Ai
DQi
Output
Previous Data Valid
t
v(A)
(9)
Address Valid
t
a(A)
(2)
Output Data Valid
Read Cycle 2: G-, E-controlled (during Read cycle: W = V
IH
)
g
t
cR
(1)
Ai
E
G
DQi
Output
High Impedance
t
PU
(10)
ACTIVE
STANDBY
Address Valid
t
a(A)
(2)
t
a(E)
(3)
t
en(E)
(7)
t
a(G)
(4)
t
en(G)
(8)
Output Data Valid
t
dis(G)
(6)
t
PD
(11)
t
dis(E)
(5)
I
CC
Switching Characteristics
No.
Write Cycle
12 Write Cycle Time
13 Write Pulse Width
14 Write Pulse Width Setup Time
15 Address Setup Time
16 Address Valid to End of Write
17 Chip Enable Setup Time
18 Chip Enable to End of Write
19 Data Setup Time to End of Write
20 Data Hold Time after End of Write
21 Address Hold after End of Write
22 W LOW to Output in High-Z
h, i
23 W HIGH to Output in Low-Z
Symbol
Alt. #1
t
AVAV
t
WLWH
t
WLEH
t
AVWL
t
AVWH
t
ELWH
t
ELEH
t
DVWH
t
WHDX
t
WHAX
t
WLQZ
t
WHQX
t
DVEH
t
EHDX
t
EHAX
t
AVEL
t
AVEH
Alt. #2
t
AVAV
IEC
t
cW
t
w(W)
t
su(W)
t
su(A)
t
su(A-WH)
t
su(E)
t
w(E)
t
su(D)
t
h(D)
t
h(A)
t
dis(W)
t
en(W)
5
25
35
45
Unit
Min. Max. Min. Max. Min. Max.
25
20
20
0
20
20
20
10
0
0
10
5
35
25
25
0
25
25
25
12
0
0
13
5
45
30
30
0
30
30
30
15
0
0
15
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
April 21, 2004
5
ZMD [ Zentrum Mikroelektronik Dresden AG ]
