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产品型号2N3766的Datasheet PDF文件预览

TECHNICAL DATA  
NPN POWER SILICON TRANSISTOR  
Qualified per MIL-PRF-19500/ 518  
Devices  
Qualified Level  
JAN  
2N3766  
2N3767  
JANTX  
JANTXV  
MAXIMUM RATINGS  
Ratings  
Symbol 2N3766 2N3767 Units  
Collector-Emitter Voltage  
Collector-Base Voltage  
Emitter-Base Voltage  
Base Current  
60  
80  
Vdc  
Vdc  
Vdc  
Adc  
Adc  
W
VCEO  
VCBO  
VEBO  
IB  
80  
100  
6.0  
2.0  
4.0  
25  
Collector Current  
IC  
Total Power Dissipation  
@ TC = +250C (1)  
PT  
-65 to +200  
0C  
Operating & Storage Temperature Range  
Top, T  
stg  
TO-66*  
(TO-213AA)  
THERMAL CHARACTERISTICS  
Characteristics  
Symbol  
Max.  
Unit  
0C/W  
Thermal Resistance, Junction-to-Case  
1) Derate linearly 143 mW/0C between TC = +250C and TC = +2000C  
7.0  
R
qJC  
*See Appendix A for  
Package Outline  
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)  
Characteristics  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
IC = 100 mAdc  
Symbol  
Min.  
Max.  
Unit  
Vdc  
60  
80  
2N3766  
2N3767  
V(BR)  
CEO  
Collector-Emitter Cutoff Current  
VCE = 60 Vdc  
VCE = 80 Vdc  
Collector-Emitter Cutoff Current  
VCE = 80 Vdc, VBE = 1.5 Vdc  
VCE = 100 Vdc, VBE = 1.5 Vdc  
Collector-Base Cutoff Current  
VCB = 80 Vdc  
500  
500  
2N3766  
2N3767  
ICEO  
mAdc  
mAdc  
10  
10  
2N3766  
2N3767  
ICEX  
10  
10  
2N3766  
2N3767  
ICBO  
mAdc  
mAdc  
VCB = 100 Vdc  
Emitter-Base Cutoff Current  
VEB = 6.0 Vdc  
IEBO  
500  
6 Lake Street, Lawrence, MA 01841  
120101  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
Page 1 of 2  
2N3766, 2N3767 JAN SERIES  
ELECTRICAL CHARACTERISTICS (con’t)  
Characteristics  
ON CHARACTERISTICS (2)  
Symbol  
Min.  
Max.  
Unit  
Forward-Current Transfer Ratio  
IC = 50 mAdc, VCE = 5.0 Vdc  
IC = 500 mAdc, VCE = 5.0 Vdc  
IC = 1.0 Adc, VCE = 10 Vdc  
Collector-Emitter Saturation Voltage  
IC = 1.0 Adc, IB = 0.1 Adc  
IC = 0.5 Adc, IB = 0.05 Adc  
Base-Emitter Voltage  
IC = 1.0 Adc, VCE = 10 Vdc  
30  
40  
20  
hFE  
160  
2.5  
1.0  
Vdc  
Vdc  
VCE(sat)  
1.5  
VBE(on)  
DYNAMIC CHARACTERISTICS  
Magnitude of Common Emitter Small-Signal Short-Circuit  
Forward Current Transfer Ratio  
IC = 500 mAdc, VCE = 10 Vdc, f = 10 MHz  
Output Capacitance  
8.0  
50  
½hfe½  
1.0  
pF  
Cobo  
VCB = 10 Vdc, IE = 0, 0.1 MHz £ f £ 1.0 MHz  
SWITCHING CHARACTERISTICS  
Turn-On Time  
VCC = 30 Vdc; IC = 0.5 Adc; IB = 0.05 Adc  
Turn-Off Time  
ton  
ms  
ms  
0.25  
2.5  
toff  
VCC = 30 Vdc; IC = 0.5 Adc; IB = IB = 0.05 Adc  
SAFE OPERATING AREA  
DC Tests  
TC = +250C, 1 Cycle, t = 1.0 s  
Test 1  
VCE = 6.25 Vdc, IC = 4.0 Adc  
Test 2  
VCE = 20 Vdc, IC = 1.25 Adc  
Test 3  
VCE = 50 Vdc, IC = 150 mAdc  
VCE = 65 Vdc, IC = 150 mAdc  
2N3766  
2N3767  
(2) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.  
6 Lake Street, Lawrence, MA 01841  
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803  
120101  
Page 2 of 2  
配单直通车
2N3766产品参数
型号:2N3766
生命周期:Obsolete
包装说明:,
Reach Compliance Code:unknown
风险等级:5.55
Is Samacsys:N
最大集电极电流 (IC):1 A
配置:Single
最小直流电流增益 (hFE):40
最高工作温度:175 °C
极性/信道类型:NPN
最大功率耗散 (Abs):20 W
子类别:Other Transistors
表面贴装:NO
标称过渡频率 (fT):10 MHz
Base Number Matches:1
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