2N5400芯片引脚定义引脚图及功能IC贸易商引脚图技术参数-中国IC网-芯三七

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产品型号2N5400的概述

芯片2N5400的概述 2N5400是一种常用的NPN型功率晶体管，广泛应用于电子电路中。它属于中功率晶体管，具备良好的电流放大特性，适合用于开关和放大电路。1970年代开始投入市场，2N5400至今仍被许多设计师和工程师接受和认可，因其优越的性能价格比。该晶体管可以在多种条件下可靠工作，特别在家电、自动化控制系统以及低频音频放大器中得到了广泛应用。芯片2N5400的详细参数 2N5400的主要参数包括： - 最大集电极电压（Vce）： 60V - 最大集电极电流（Ic）： 0.15A（150mA） - 最大功耗（Ptot）： 1W - 增益（hFE）： 100-300（在Ic = 10mA时） - 工作温度范围： -55°C至150°C - 封装类型： TO-2...

产品型号2N5400的Datasheet PDF文件预览

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by 2N5400/D

SEMICONDUCTOR TECHNICAL DATA

PNP Silicon

*Motorola Preferred Device

COLLECTOR

BASE

EMITTER

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Symbol 2N5400 2N5401

Unit

Vdc

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

CEO

CBO

EBO

120

130

150

160

Vdc

5.0

Vdc

Collector Current — Continuous

600

mAdc

Total Device Dissipation @ T = 25°C

Derate above 25°C

625

5.0

mW/°C

Total Device Dissipation @ T = 25°C

Derate above 25°C

1.5

Watts

mW/°C

Operating and Storage Junction

Temperature Range

T , T

–55 to +150

°C

stg

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

200

Unit

°C/W

Thermal Resistance, Junction to Ambient

Thermal Resistance, Junction to Case

83.3

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

2N5400

2N5401

120

150

—

Collector–Base Breakdown Voltage

(I = 100 Adc, I = 0)

Vdc

(BR)CBO

2N5400

2N5401

130

160

—

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

5.0

—

(BR)EBO

Collector Cutoff Current

CBO

= 100 Vdc, I = 0)

2N5400

2N5401

2N5400

2N5401

—

100

nAdc

= 120 Vdc, I = 0)

= 100 Vdc, I = 0, T = 100°C)

µAdc

= 120 Vdc, I = 0, T = 100°C)

Emitter Cutoff Current

(V = 3.0 Vdc, I = 0)

—

nAdc

EBO

1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.

Preferred devices are Motorola recommended choices for future use and best overall value.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorola, Inc. 1996

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (Continued)

Characteristic

Symbol

Min

Max

Unit

(1)

ON CHARACTERISTICS

DC Current Gain

(I = 1.0 mAdc, V

—

= 5.0 Vdc)

2N5400

2N5401

—

(I = 10 mAdc, V

2N5400

2N5401

180

240

(I = 50 mAdc, V

2N5400

2N5401

—

Collector–Emitter Saturation Voltage

(I = 10 mAdc, I = 1.0 mAdc)

Vdc

CE(sat)

—

0.2

0.5

(I = 50 mAdc, I = 5.0 mAdc)

Base–Emitter Saturation Voltage

(I = 10 mAdc, I = 1.0 mAdc)

BE(sat)

—

1.0

(I = 50 mAdc, I = 5.0 mAdc)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

MHz

(I = 10 mAdc, V

= 10 Vdc, f = 100 MHz)

2N5400

2N5401

100

400

300

Output Capacitance

(V = 10 Vdc, I = 0, f = 1.0 MHz)

—

6.0

—

obo

Small–Signal Current Gain

(I = 1.0 mAdc, V

= 10 Vdc, f = 1.0 kHz)

2N5400

2N5401

200

Noise Figure

—

8.0

(I = 250 µAdc, V

= 5.0 Vdc, R = 1.0 kΩ, f = 1.0 kHz)

1. Pulse Test: Pulse Width = 300 s, Duty Cycle = 2.0%.

Motorola Small–Signal Transistors, FETs and Diodes Device Data

200

150

= 125°C

100

25°C

–55°C

= –1.0 V

= –5.0 V

0.1

0.2

0.3

0.5

1.0

2.0

3.0

5.0

100

, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

= 1.0 mA

10 mA

30 mA

100 mA

0.005

0.01

0.02

0.05

0.1

0.2

0.5

1.0

2.0

5.0

, BASE CURRENT (mA)

Figure 2. Collector Saturation Region

= 30 V

= I

CES

= 125°C

75°C

–1

–2

REVERSE

FORWARD

25°C

–3

0.3

0.2

0.1

0.2

0.3

0.4

0.5

0.6

0.7

, BASE–EMITTER VOLTAGE (VOLTS)

Figure 3. Collector Cut–Off Region

Motorola Small–Signal Transistors, FETs and Diodes Device Data

1.0

0.9

2.5

2.0

= 25°C

= –55°C to 135°C

0.8

0.7

0.6

1.5

1.0

0.5

@ I /I = 10

C B

BE(sat)

for V

CE(sat)

–0.5

–1.0

–1.5

0.5

0.4

0.3

0.2

0.1

@ I /I = 10

C B

CE(sat)

for V

BE(sat)

1.0

–2.0

–2.5

0.1

0.2

1.0

2.0 3.0 5.0

0.1

0.2

2.0 3.0 5.0

0.3 0.5

20 30 50

100

0.3 0.5

20 30 50

100

, COLLECTOR CURRENT (mA)

I , COLLECTOR CURRENT (mA)

Figure 4. “On” Voltages

Figure 5. Temperature Coefficients

100

= 25°C

+8.8 V

–30 V

10.2 V

ibo

100

3.0 k

7.0

5.0

out

0.25

µF

µs

INPUT PULSE

obo

5.1 k

100

3.0

2.0

t , t

≤

10 ns

1N914

DUTY CYCLE = 1.0%

1.0

0.2

Values Shown are for I @ 10 mA

1.0

2.0 3.0

5.0 7.0

0.3

0.5 0.7

, REVERSE VOLTAGE (VOLTS)

Figure 6. Switching Time Test Circuit

Figure 7. Capacitances

1000

700

500

2000

1000

/I = 10

C B

t @ V

= 120 V

= 25°C

/I = 10

C B

t @ V

= 120 V

700

500

= 25°C

300

200

t @ V

= 30 V

t @ V

= 30 V

300

200

100

@ V = 120 V

100

@ V = 1.0 V

BE(off)

= 120 V

0.2

1.0

2.0 3.0 5.0

, COLLECTOR CURRENT (mA)

1.0

2.0 3.0 5.0

I , COLLECTOR CURRENT (mA)

0.3 0.5

20 30 50

100

200

0.3 0.5

20 30 50

100

200

Figure 8. Turn–On Time

Figure 9. Turn–Off Time

Motorola Small–Signal Transistors, FETs and Diodes Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. CONTOUR OF PACKAGE BEYOND DIMENSION R

IS UNCONTROLLED.

4. DIMENSION F APPLIES BETWEEN P AND L.

DIMENSION D AND J APPLY BETWEEN L AND K

MINIMUM. LEAD DIMENSION IS UNCONTROLLED

IN P AND BEYOND DIMENSION K MINIMUM.

SEATING

PLANE

INCHES

MIN

MILLIMETERS

DIM

MAX

0.205

0.210

0.165

0.022

0.019

0.055

0.105

0.020

–––

MIN

4.45

4.32

3.18

0.41

1.15

2.42

0.39

12.70

6.35

2.04

–––

MAX

5.20

5.33

4.19

0.55

0.48

1.39

2.66

0.50

–––

0.175

0.170

0.125

0.016

0.045

0.095

0.015

0.500

0.250

0.080

–––

X X

SECTION X–X

–––

0.105

0.100

–––

2.66

2.54

–––

0.115

0.135

2.93

3.43

–––

STYLE 1:

PIN 1. EMITTER

CASE 029–04

(TO–226AA)

ISSUE AD

2. BASE

3. COLLECTOR

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Motorolareserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representationorguaranteeregarding

the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and

specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different

applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does

not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in

systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of

the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such

unintendedor unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless

against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.

Motorola and

are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.

How to reach us:

USA/EUROPE: Motorola Literature Distribution;

JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki,

P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447

6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315

MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609

INTERNET: http://Design–NET.com

HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park,

51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298

Motorola Small–Signal Transistors, FETs and Diodes Device Data

2N5400/D

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2N5400产品参数

型号:	2N5400
极性：	PNP
Collector-emitter breakdown voltage：	120
Collector Current - Continuous：	0.6
DC current gain - Min：	40
DC current gain - Max：	180
Transition frequency：	100
Package：	TO-92
Storage Temperature Range：	-55-150
class：	Transistors

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