5082-2835应用文章市场行情现货热卖使用介绍供应商报价-中国IC网-芯三七

Schottky Barrier Diodes for

General Purpose Applications

Technical Data

1N5711

1N5712

5082-2300 Series

5082-2800 Series

5082-2900

Features

• Low Turn-On Voltage

The 5082-2835 is a passivated

Schottky diode in a low cost glass

package. It is optimized for low

turn-on voltage. The 5082-2835 is

particularly well suited for the

UHF mixing needs of the CATV

marketplace.

Outline 15

0.41 (.016)

0.36 (.014)

As Low as 0.34 V at 1 mA

• Pico Second Switching Speed

• High Breakdown Voltage

25.4 (1.00)

MIN.

Up to 70 V

• Matched Characteristics

Available

1.93 (.076)

1.73 (.068)

The 5082-2300 Series and

5082-2900 devices are unpas-

sivated Schottky diodes in a glass

package. These diodes have

extremely low 1/f noise and are

ideal for low noise mixing, and

high sensitivity detecting. They

are particularly well suited for use

in Doppler or narrow band video

receivers.

Description/Applications

The 1N5711, 1N5712, 5082-2800/

10/11 are passivated Schottky

barrier diodes which use a

patented “guard ring” design to

achieve a high breakdown

voltage. Packaged in a low cost

glass package, they are well suited

for high level detecting, mixing,

switching, gating, log or A-D

converting, video detecting,

frequency discriminating,

4.32 (.170)

3.81 (.150)

CATHODE

25.4 (1.00)

MIN.

DIMENSIONS IN MILLIMETERS AND (INCHES).

sampling, and wave shaping.

Maximum Ratings

Junction Operating and Storage Temperature Range

5082-2303, -2900 .................................................................-60°C to +100°C

1N5711, 1N5712, 5082-2800/10/11 ....................................-65°C to +200°C

5082-2835 ............................................................................-60°C to +150°C

DC Power Dissipation

(Measured in an infinite heat sink at T_CASE= 25°C)

Derate linearly to zero at maximum rated temperature

5082-2303, -2900 .............................................................................. 100 mW

1N5711, 1N5712, 5082-2800/10/11 ................................................. 250 mW

5082-2835 ......................................................................................... 150 mW

Peak Inverse Voltage ................................................................................. V_BR

2

Package Characteristics

Outline 15

Lead Material ........................................................................................ Dumet

Lead Finish .............................................................................. 95-5% Tin-Lead

Max. Soldering Temperature ................................................ 260°C for 5 sec

Min. Lead Strength ....................................................................4 pounds pull

Typical Package Inductance

1N5711, 1N5712: ................................................................................ 2.0 nH

2800 Series: ........................................................................................ 2.0 nH

2300 Series, 2900: .............................................................................. 3.0 nH

Typical Package Capacitance

1N5711, 1N5712: ................................................................................ 0.2 pF

2800 Series: ........................................................................................ 0.2 pF

2300 Series, 2900: ............................................................................ 0.07 pF

The leads on the Outline 15 package should be restricted so that the

bend starts at least 1/16 inch from the glass body.

Outline 15 diodes are available on tape and reel. The tape and reel

specification is patterned after RS-296-D.

Electrical Specifications at T_A= 25°C

General Purpose Diodes

Min.

Breakdown

Voltage

Max.

Forward

Voltage

V = 1 V Max.

at Forward

Current

Max.

Reverse Leakage

Current

Max.

Capaci-

tance

F

Part

Number

Package

Outline

V_BR( V)

V ( mV)

I_F( mA)

I_R( nA) at V ( V)

C_T( pF)

F

R

5082-2800

1N5711

15

70

20

15

8*

410

15

200

100

150

100

50

15

16

8

2.0

1.2

1.0

5082-2810

1N5712

410

35

550

35

5082-2811

5082-2835

410

20

340

10*

1

Test

I_R= 10 µA

I_F= 1 mA

*V = 0.45 V

V = 0 V

F

R

Conditions

*I_R= 100 µA

f =1.0 MHz

Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 5 mA except for 5082-2835

which is measured at 20 mA.

3

Low 1/f ( Flicker) Noise Diodes

Min.

Max.

Forward

Voltage

V = 1 V Max.

at Forward

Current

Max.

Reverse Leakage

Current

Max.

Capaci-

tance

F

Part

Number

5082-

Breakdown

Voltage

V_BR( V)

Package

Outline

V ( mV)

I_F( mA)

I_R( nA) at V ( V)

C_T( pF)

F

R

2303

2900

15

20

10

400

35

20

500

100

15

5

1.0

1.2

Test

I_R= 10 µA

I_F= 1 mA

V = 0 V

R

Conditions

f =1.0 MHz

Note: Effective Carrier Lifetime (τ) for all these diodes is 100 ps maximum measured with Krakauer method at 20 mA.

Matched Pairs and Quads

Basic

Part Number

5082-

Matched

Pair

Unconnected

Matched

Quad

Unconnected

Batch

Matched^[1]

Test Conditions

2900

∆V at I_F= 1.0, 10 mA

F

2800

5082-2804

5082-2805

∆V at I_F= 0.5, 5 mA

F

∆V = 20 mV

*I_F= 10 mA

F

∆C_Oat f = 1.0 MHz

2811

5082-2826

∆V at I_F= 10 mA

F

∆V = 10 mV

∆C_Oat f = 1.0 MHz

F

∆C_O= 0.1 pF

2835

5082-2080

∆V at I_F=10 mA

F

∆V = 10 mV

∆C_Oat f = 1.0 MHz

F

∆C_O= 0.1 pF

Note:

1. Batch matched devices have a minimum batch size of 50 devices.

SPICE Parameters

Parameter Units 5082-2800

5082-2810

5082-2811

5082-2835

5082-2303

5082-2900

B_V

C_J0

E_G

I_BV

I_S

V

pF

eV

A

75

1.6

25

0.8

18

1.0

9

0.7

25

0.7

10

1.1

0.69

10E -5

7 x 1.0E-9

1.08

10

0.69

10E -5

10E-8

1.08

15

10E -5

2.2 x 10E -9

1.08

10E -5

1.1 x 10E -9

1.08

10E -5

0.3 x 10E -8

1.08

10E -5

2.2 x 10E -8

1.08

A

N

R_S

P_B

P_T

M

Ω

25

10

5

V

0.6

0.56

2

0.64

2

0.64

2

0.5

4

Typical Parameters

100

10.000

1,000

100

10

1000

100

10

100

75

10

1

50

25

100°C

50°C

25°C

0°C

T

= 25°C

A

0.1

0.01

–50°C

1

0

0.10 0.20 0.30 0.40 0.50 0.60

– FORWARD VOLTAGE (V)

0

5

10

15

0.01

0

10

I - FORWARD CURRENT (mA)

F

100

V

(V)

F

BR

Figure 1. I-V Curve Showing Typical

Temperature Variation for 5082-2300

Series and 5082-2900 Schottky Diodes.

Figure 2. 5082-2300 Series Typical

Reverse Current vs. Reverse Voltage

at Various Temperatures.

Figure 3. 5082-2300 Series and 5082-2900

Typical Dynamic Resistance ( R ) vs.

D

Forward Current ( I ) .

F

100,000

1.2

1.0

0.8

0.6

50

150

125

10

5

10,000

1000

100

10

100

75

+150°C

1

50

25

0.5

+100°C

5082-2900

5082-2303

+50°C

+25°C

0°C

0.4

0.1

0

0.05

0.2

0

–50°C

T

= °C

A

1

0.01

0

0.2

0.4

0.6

0.8

1.0

1.2

0

4

8

12

16

20

0

0.2

V - FORWARD VOLTAGE (V)

F

0.4

0.6

0.8

1.0

1.2

V

R

- REVERSE VOLTAGE (V)

V

- REVERSE VOLTAGE (V)

R

Figure 6. ( 5082-2800 OR 1N5711)

Figure 4. 5082-2300 and 5082-2900

Typical Capacitance vs. Reverse

Voltage.

Figure 5. I-V Curve Showing Typical

Temperature Variation for 5082-2800

or 1N5711 Schottky Diodes.

Typical Variation of Reverse Current

( I ) vs. Reverse Voltage ( V ) at

R

Various Temperatures.

12.0

1.5

1.0

0.5

0

100

10

10,000

1000

100

150

125

100

75

50

+150°C

1.0

0.1

25

+100°C

+50°C

T

= °C

A

10

+25°C

0°C

–50°C

0.01

1.0

0

10

20

30

40

50

0

0.2

0.4

0.6

0.8

1.0

1.2

0

5

10

V - REVERSE VOLTAGE (V)

R

15

20

25

30

V

- REVERSE VOLTAGE (V)

V

- FORWARD VOLTAGE (V)

R

F

Figure 7. ( 5082-2800 or 1N5711)

Typical Capacitance ( C ) vs. Reverse

Figure 8. I-V Curve Showing Typical

Temperature Variation for the 5082-

2810 or 1N5712 Schottky Diode.

Figure 9. ( 5082-2810 or IN5712)

Typical Variation of Reverse Current

T

Voltage ( V ) .

( I ) vs. Reverse Voltage ( V ) at

R

Various Temperatures.

5

Typical Parameters, continued

100

100,000

10,000

1000

100

10

150

10

100

50

1.0

+150°C

+100°C

+150°C

25

+100°C

+50°C

T

= °C

A

+50°C

+25°C

0°C

0.1

+25°C

0°C

–50°C

0.1

10

–50°C

0.01

1

0

0.2

0.4

0.6

0.8

1.0

1.2

0

5

10

15

20

25

30

0

0.2

0.4

0.6

0.8

1.0

1.2

V

- FORWARD VOLTAGE (V)

V

- REVERSE VOLTAGE (V)

V - FORWARD VOLTAGE (V)

F

R

Figure 10. I-V Curve Showing Typical

Figure 11. ( 5082-2811) Typical Variation Figure 12. I-V Curve Showing Typical

Temperature Variation for the 5082-2811 of Reverse Current ( I ) vs. Reverse

Temperature Variations for 5082-2835

Schottky Diode.

R

Schottky Diode.

Voltage ( V ) at Various Temperatures.

R

100,000

11.4

1.2

1000

5082-2800, 1N5711

+150°C

+125°C

10,000

1000

100

10

1.0

5082-2811

100

+100°C

+75°C

+50°C

+25°C

0.8

5082-2811

1N5712

5082-2810/2811

IN5712

0.6

5082-2835

0.4

10

0.2

0

5082-2835

1

0

1

2

3

4

5

6

0

2

4

6

8

10

0

2

4

6

8

10

V

- REVERSE VOLTAGE (V)

V

- REVERSE VOLTAGE (V)

I - FORWARD CURRENT (mA)

F

R

Figure 13. ( 5082-2835) Typical Variation

of Reverse Current ( I ) vs. Reverse

Figure 14. Typical Capacitance ( C ) vs.

Figure 15. Typical Dynamic Resistance

( R ) vs. Forward Current ( I ) .

T

Reverse Voltage ( V ) .

R

D

F

Voltage ( V ) at Various Temperatures.

R

Diode Package Marking

1N5xxx

5082-xxxx

would be marked:

1Nx

xx

xxx

xx

YWW

where xxxx are the last four digits of the 1Nxxxx or the 5082-xxxx part

number. Y is the last digit of the calendar year. WW is the work week of

manufacture.

Examples of diodes manufactured during workweek 45 of 1999:

1N5712

5082-3080

would be marked:

1N5

712

945

30

80

945

www.semiconductor.agilent.com

Data subject to change.

Obsoletes 5968-4304E

5968-7181E (11/99)

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